参数资料
型号: M25P32-VMF6
厂商: 意法半导体
元件分类: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 11/39页
文件大小: 506K
代理商: M25P32-VMF6
19/39
M25P32
Read Data Bytes (READ)
The device is first selected by driving Chip Select
(S) Low. The instruction code for the Read Data
Bytes (READ) instruction is followed by a 3-byte
address (A23-A0), each bit being latched-in during
the rising edge of Serial Clock (C). Then the mem-
ory contents, at that address, is shifted out on Se-
rial Data Output (Q), each bit being shifted out, at
a maximum frequency fR, during the falling edge of
Serial Clock (C).
The instruction sequence is shown in Figure 14..
The first byte addressed can be at any location.
The address is automatically incremented to the
next higher address after each byte of data is shift-
ed out. The whole memory can, therefore, be read
with a single Read Data Bytes (READ) instruction.
When the highest address is reached, the address
counter rolls over to 000000h, allowing the read
sequence to be continued indefinitely.
The Read Data Bytes (READ) instruction is termi-
nated by driving Chip Select (S) High. Chip Select
(S) can be driven High at any time during data out-
put. Any Read Data Bytes (READ) instruction,
while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on
the cycle that is in progress.
Figure 14. Read Data Bytes (READ) Instruction Sequence and Data-Out Sequence
Note: Address bits A23 to A22 are Don’t Care.
C
D
AI03748D
S
Q
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
76543
1
7
0
High Impedance
Data Out 1
Instruction
24-Bit Address
0
MSB
2
39
Data Out 2
相关PDF资料
PDF描述
M25P32VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
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参数描述
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