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参数资料
| 型号： | M25P32-VMF6 |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 5/39页 |
| 文件大小： | 506K |
| 代理商： | M25P32-VMF6 |
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13/39
M25P32
INSTRUCTIONS
All instructions, addresses and data are shifted in
and out of the device, most significant bit first.
Serial Data Input (D) is sampled on the first rising
edge of Serial Clock (C) after Chip Select (S) is
driven Low. Then, the one-byte instruction code
must be shifted in to the device, most significant bit
first, on Serial Data Input (D), each bit being
latched on the rising edges of Serial Clock (C).
The instruction set is listed in Table 4..
Every instruction sequence starts with a one-byte
instruction code. Depending on the instruction,
this might be followed by address bytes, or by data
bytes, or by both or none.
In the case of a Read Data Bytes (READ), Read
Data Bytes at Higher Speed (Fast_Read), Read
Status
Register
(RDSR),
Read
Identification
(RDID) or Release from Deep Power-down, and
Read Electronic Signature (RES) instruction, the
shifted-in instruction sequence is followed by a
data-out sequence. Chip Select (S) can be driven
High after any bit of the data-out sequence is be-
ing shifted out.
In the case of a Page Program (PP), Sector Erase
(SE), Bulk Erase (BE), Write Status Register
(WRSR), Write Enable (WREN), Write Disable
(WRDI) or Deep Power-down (DP) instruction,
Chip Select (S) must be driven High exactly at a
byte boundary, otherwise the instruction is reject-
ed, and is not executed. That is, Chip Select (S)
must driven High when the number of clock pulses
after Chip Select (S) being driven Low is an exact
multiple of eight.
All attempts to access the memory array during a
Write Status Register cycle, Program cycle or
Erase cycle are ignored, and the internal Write
Status Register cycle, Program cycle or Erase cy-
cle continues unaffected.
Table 4. Instruction Set
Instruction
Description
One-byte Instruction Code
Address
Bytes
Dummy
Bytes
Data
Bytes
WREN
Write Enable
0000 0110
06h
0
WRDI
Write Disable
0000 0100
04h
0
RDID
Read Identification
1001 1111
9Fh
0
1 to 3
RDSR
Read Status Register
0000 0101
05h
0
1 to
∞
WRSR
Write Status Register
0000 0001
01h
0
1
READ
Read Data Bytes
0000 0011
03h
3
0
1 to
∞
FAST_READ
Read Data Bytes at Higher Speed
0000 1011
0Bh
3
1
1 to
∞
PP
Page Program
0000 0010
02h
3
0
1 to 256
SE
Sector Erase
1101 1000
D8h
3
0
BE
Bulk Erase
1100 0111
C7h
0
DP
Deep Power-down
1011 1001
B9h
0
RES
Release from Deep Power-down,
and Read Electronic Signature
1010 1011
ABh
0
3
1 to
∞
Release from Deep Power-down
0
相关PDF资料 |
PDF描述 |
|---|---|
| M25P32VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P32VMF6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMF6G | 功能描述:闪存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P32VMF6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMF6P | 功能描述:闪存 32M (4Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P32-VMF6PBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
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