参数资料
型号: M25P32-VMF6
厂商: 意法半导体
元件分类: FLASH
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位统一部门,串行闪存
文件页数: 16/39页
文件大小: 506K
代理商: M25P32-VMF6
23/39
M25P32
Bulk Erase (BE)
The Bulk Erase (BE) instruction sets all bits to 1
(FFh). Before it can be accepted, a Write Enable
(WREN) instruction must previously have been ex-
ecuted. After the Write Enable (WREN) instruction
has been decoded, the device sets the Write En-
able Latch (WEL).
The Bulk Erase (BE) instruction is entered by driv-
ing Chip Select (S) Low, followed by the instruction
code on Serial Data Input (D). Chip Select (S)
must be driven Low for the entire duration of the
sequence.
The instruction sequence is shown in Figure 18..
Chip Select (S) must be driven High after the
eighth bit of the instruction code has been latched
in, otherwise the Bulk Erase instruction is not exe-
cuted. As soon as Chip Select (S) is driven High,
the self-timed Bulk Erase cycle (whose duration is
tBE) is initiated. While the Bulk Erase cycle is in
progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit.
The Write In Progress (WIP) bit is 1 during the self-
timed Bulk Erase cycle, and is 0 when it is com-
pleted. At some unspecified time before the cycle
is completed, the Write Enable Latch (WEL) bit is
reset.
The Bulk Erase (BE) instruction is executed only if
all Block Protect (BP2, BP1, BP0) bits are 0. The
Bulk Erase (BE) instruction is ignored if one, or
more, sectors are protected.
Figure 18. Bulk Erase (BE) Instruction Sequence
C
D
AI03752D
S
2
1
34567
0
Instruction
相关PDF资料
PDF描述
M25P32VMN6G 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6P 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6T 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25P32VMN6TP 4 Mbit Uniform Sector, Serial Flash Memory
相关代理商/技术参数
参数描述
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