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参数资料
| 型号： | M25P32-VMF6 |
| 厂商： | 意法半导体 |
| 元件分类： | FLASH |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位统一部门，串行闪存 |
| 文件页数： | 39/39页 |
| 文件大小： | 506K |
| 代理商： | M25P32-VMF6 |
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M25P32
Protection Modes
The environments where non-volatile memory de-
vices are used can be very noisy. No SPI device
can operate correctly in the presence of excessive
noise. To help combat this, the M25P32 features
the following data protection mechanisms:
■
Power On Reset and an internal timer (tPUW)
can provide protection against inadvertant
changes while the power supply is outside the
operating specification.
■
Program, Erase and Write Status Register
instructions are checked that they consist of a
number of clock pulses that is a multiple of
eight, before they are accepted for execution.
■
All instructions that modify data must be
preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch
(WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Write Disable (WRDI) instruction
completion
–
Write Status Register (WRSR) instruction
completion
–
Page Program (PP) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
■
The Block Protect (BP2, BP1, BP0) bits allow
part of the memory to be configured as read-
only. This is the Software Protected Mode
(SPM).
■
The Write Protect (W) signal allows the Block
Protect (BP2, BP1, BP0) bits and Status
Register Write Disable (SRWD) bit to be
protected. This is the Hardware Protected
Mode (HPM).
■
In addition to the low power consumption
feature, the Deep Power-down mode offers
extra software protection from inadvertant
Write, Program and Erase instructions, as all
instructions are ignored except one particular
instruction (the Release from Deep Power-
down instruction).
Table 2. Protected Area Sizes
Note: 1. The device is ready to accept a Bulk Erase instruction if, and only if, all Block Protect (BP2, BP1, BP0) are 0.
Status Register
Content
Memory Content
BP2
Bit
BP1
Bit
BP0
Bit
Protected Area
Unprotected Area
0
none
All sectors1 (64 sectors: 0 to 63)
0
1
Upper 64th (Sector 63)
Lower 63/64ths (63 sectors: 0 to 62)
0
1
0
Upper 32nd (two sectors: 62 and 63)
Lower 31/32nds (62 sectors: 0 to 61)
0
1
Upper sixteenth (four sectors: 60 to 63)
Lower 15/16ths (60 sectors: 0 to 59)
1
0
Upper eighth (eight sectors: 56 to 63)
Lower seven-eighths (56 sectors: 0 to 55)
1
0
1
Upper quarter (sixteen sectors: 48 to 63)
Lower three-quarters (48 sectors: 0 to 47)
1
0
Upper half (thirty-two sectors: 32 to 63)
Lower half (32 sectors: 0 to 31)
1
All sectors (64 sectors: 0 to 63)
none
相关PDF资料 |
PDF描述 |
|---|---|
| M25P32VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P32VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P32VMF6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMF6G | 功能描述:闪存 SERIAL FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P32VMF6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P32-VMF6P | 功能描述:闪存 32M (4Mx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M25P32-VMF6PBA | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays |
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