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参数资料
| 型号： | M28F102 |
| 厂商： | 意法半导体 |
| 英文描述： | 1 Mbit (128Kb x8, Bulk) Flash Memory(1M位闪速存储器) |
| 中文描述： | 1兆位（128KB的× 8，散装）闪存（100万位闪速存储器） |
| 文件页数： | 6/20页 |
| 文件大小： | 147K |
| 代理商： | M28F102 |
Symbol
Parameter
Test Condition
Min
Max
Unit
I
LI
Input Leakage Current
0V
≤
V
IN
≤
V
CC
±
1
μ
A
I
LO
Output Leakage Current
0V
≤
V
OUT
≤
V
CC
±
10
μ
A
I
CC
Supply Current (Read)
E = V
IL
, f = 8MHz
50
mA
I
CC1
Supply Current (Standby) TTL
E = V
IH
1
mA
Supply Current (Standby) CMOS
E = V
CC
±
0.2V
100
μ
A
I
CC2
I
CC3(1)
I
CC4(1)
(1)
Supply Current (Programming)
During Programming
10
mA
Supply Current (Program Verify)
During Verify
30
mA
Supply Current (Erase)
During Erasure
15
mA
I
CC5
(1)
Supply Current (Erase Verify)
During Erase Verify
30
mA
I
CC6
(1)
Supply Current
(Electronic Signature)
A9 = V
ID
30
mA
I
LPP
Program LeakageCurrent
V
PP
≤
V
CC
±
10
μ
A
I
PP
Program Current(Read or
Standby)
V
PP
> V
CC
200
μ
A
V
PP
≤
V
CC
±
10
μ
A
I
PP1(1)
Program Current(Programming)
V
PP
= V
PPH
, During Programming
50
mA
I
PP2(1)
Program Current(Program
Verify)
V
PP
= V
PPH
, During Verify
5
mA
I
PP3(1)
I
PP4(1)
Program Current(Erase)
V
PP
= V
PPH
, During Erase
50
mA
Program Current(Erase Verify)
V
PP
= V
PPH
, During Erase Verify
5
mA
I
PP5(1)
Program Current
(Electronic Signature)
A9 = V
ID
500
μ
A
V
IL
Input Low Voltage
–0.5
0.8
V
V
IH
Input High Voltage TTL
2
V
CC
+ 0.5
V
Input High Voltage CMOS
0.7 V
CC
V
CC
+ 0.5
V
V
OL
Output Low Voltage
I
OL
= 5.8mA(grade 1)
0.45
V
I
OL
= 2.1mA (grade 3&6)
0.45
V
V
OH
Output High Voltage CMOS
I
OH
= –100
μ
A
V
CC
–0.4
V
I
OH
= –2.5mA
0.85 V
CC
V
Output High VoltageTTL
I
OH
= –2.5mA
2.4
V
V
PPL
Program Voltage (Read
Operations)
0
6.5
V
V
PPH
Program Voltage (Read/Write
Operations)
11.4
12.6
V
V
ID
A9 Voltage(Electronic Signature)
11.5
13
V
I
ID
(1)
A9 Current (Electronic Signature)
A9 = V
ID
200
μ
A
V
LKO
Supply Voltage,Erase/Program
Lock-out
2.5
V
Note:
1. Not 100% tested. Characterisation Data available.
Table8. DC Characteristics
(T
A
= 0 to 70
°
C, –40 to 85
°
C or –40 to 125
°
C; V
CC
= 5V
±
5% or 5V
±
10%)
6/20
M28F102
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F201 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120K1 | 功能描述:闪存 PLCC-32 256KX8 120NS RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M28F201-120K1R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120K1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
| M28F201-120K3R | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:2 Mb 256K x 8, Chip Erase FLASH MEMORY |
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