参数资料
型号: M28W160CB100N6T
厂商: 意法半导体
英文描述: 16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
中文描述: 16兆位(1兆x16插槽,引导块)3V电源快闪记忆体
文件页数: 40/50页
文件大小: 327K
代理商: M28W160CB100N6T
M28W160CT, M28W160CB
40/50
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 17. Program Flowchart and Pseudo Code
Note: 1. Status check of b1 (Protected Block), b3 (V
PP
Invalid) and b4 (Program Error) can be made after each program operation or after
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
Write 40h or 10h
AI03538b
Start
Write Address
& Data
Read Status
Register
YES
NO
b7 = 1
YES
NO
b3 = 0
NO
b4 = 0
VPP Invalid
Error (1, 2)
Program
Error (1, 2)
program_command (addressToProgram, dataToProgram) {:
writeToFlash (any_address, 0x40) ;
/*or writeToFlash (any_address, 0x10) ; */
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
} while (status_register.b7== 0) ;
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
YES
End
YES
NO
b1 = 0
Program to Protected
Block Error (1, 2)
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
if (status_register.b4==1) /*program error */
error_handler ( ) ;
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
}
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