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参数资料
型号： M29F400BB90MT3E
厂商： NUMONYX
元件分类： PROM
英文描述： 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
封装： 0.500 INCH, LEAD FREE, PLASTIC, SOP-44
文件页数： 8/40页
文件大小： 316K
代理商： M29F400BB90MT3E
Command interface
M29F400BT, M29F400BB
16/40
4
Command interface
All Bus Write operations to the memory are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. Failure to observe a
valid sequence of Bus Write operations will result in the memory returning to Read mode.
The long command sequences are imposed to maximize data security.
The address used for the commands changes depending on whether the memory is in 16-
bit or 8-bit mode. See either Table Table 4., or Table 5., depending on the configuration that
is being used, for a summary of the commands.
4.1
Read/Reset command
The Read/Reset command returns the memory to its Read mode where it behaves like a
ROM or EPROM. It also resets the errors in the Status Register. Either one or three Bus
Write operations can be used to issue the Read/Reset command.
If the Read/Reset command is issued during a Block Erase operation or following a
Programming or Erase error then the memory will take upto 10s to abort. During the abort
period no valid data can be read from the memory. Issuing a Read/Reset command during a
Block Erase operation will leave invalid data in the memory.
4.2
Auto Select command
The Auto Select command is used to read the Manufacturer Code, the Device Code and the
Block Protection Status. Three consecutive Bus Write operations are required to issue the
Auto Select command. Once the Auto Select command is issued the memory remains in
Auto Select mode until another command is issued.
From the Auto Select mode the Manufacturer Code can be read using a Bus Read operation
with A0 = VIL and A1 = VIL. The other address bits may be set to either VIL or VIH. The
Manufacturer Code for STMicroelectronics is 0020h.
The Device Code can be read using a Bus Read operation with A0 = VIH and A1 = VIL. The
other address bits may be set to either VIL or VIH. The Device Code for the M29F400BT is
00D5h and for the M29F400BB is 00D6h.
The Block Protection Status of each block can be read using a Bus Read operation with A0
= VIL, A1 = VIH, and A12-A17 specifying the address of the block. The other address bits
may be set to either VIL or VIH. If the addressed block is protected then 01h is output on
Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output.
相关PDF资料
PDF描述
M29F400BT70MT6T 256K X 16 FLASH 5V PROM, 70 ns, PDSO44
M29F800DB70N3F 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29F800DB90N6T 512K X 16 FLASH 5V PROM, 70 ns, PDSO48
M29W160BT90ZA6 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
M29W400BT70M6T 256K X 16 FLASH 2.7V PROM, 70 ns, PDSO44
相关代理商/技术参数
参数描述
M29F400BB90N1 功能描述:闪存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29F400BB90N1T 功能描述:闪存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29F400BB90N6 功能描述:闪存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29F400BB90N6T 功能描述:闪存 512Kx8 or 256Kx16 90 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M29F400BT45N1 功能描述:闪存 512Kx8 or 256Kx16 45 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
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