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参数资料
| 型号： | M34D64-WDW6T |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 64 Kbit Serial I2C Bus EEPROM With Hardware Write Control on Top Quarter of Memory |
| 中文描述： | 64千位串行I2C总线的EEPROM，带有硬件写控制记忆的热门季 |
| 文件页数： | 6/21页 |
| 文件大小： | 147K |
| 代理商： | M34D64-WDW6T |
M34D64
6/21
Figure 7. Write Mode Sequences with WC=0 (data write enabled)
Write Operations
Following a Start condition the bus master sends
a Device Select Code with the RW bit reset to 0.
The device acknowledges this, as shown in Figure
7, and waits for two address bytes. The device re-
sponds to each address byte with an acknowledge
bit, and then waits for the data byte(s).
Writing to the memory may be inhibited if Write
Control (WC) is driven High. Any Write instruction
with Write Control (WC) driven High (during a pe-
riod of time from the Start condition until the end of
the two address bytes) will not modify the contents
of the top quarter of the memory.
Each data byte in the memory has a 16-bit (two
byte wide) address. The Most Significant Byte (Ta-
ble 3) is sent first, followed by the Least Significant
Byte (Table 4). Bits b15 to b0 form the address of
the byte in memory.
When the bus master generates a Stop condition
immediately after the Ack bit (in the “10
th
bit” time
slot), either at the end of a Byte Write or a Page
Write, the internal memory Write cycle is triggered.
A Stop condition at any other time slot does not
trigger the internal Write cycle.
During the internal Write cycle, Serial Data (SDA)
is disabled internally, and the device does not re-
spond to any requests.
Byte Write
After the Device Select code and the address
bytes, the bus master sends one data byte. If the
addressed location is Write-protected (top quarter
of the memory), by Write Control (WC) being driv-
en High, the location is not modified. The bus mas-
ter terminates the transfer by generating a Stop
condition, as shown in Figure 7.
Page Write
The Page Write mode allows up to 32 bytes to be
written in a single Write cycle, provided that they
are all located in the same ’row’ in the memory:
that is, the most significant memory address bits
(b12-b5) are the same. If more bytes are sent than
will fit up to the end of the row, a condition known
as ‘roll-over’ occurs. This should be avoided, as
S
S
BYTE WRITE
DEV SEL
BYTE ADDR
BYTE ADDR
DATA IN
WC
S
PAGE WRITE
DEV SEL
BYTE ADDR
BYTE ADDR
DATA IN 1
WC
DATA IN 2
AI01106C
PAGE WRITE
(cont'd)
WC (cont'd)
S
DATA IN N
ACK
R/W
ACK
ACK
ACK
ACK
ACK
ACK
ACK
R/W
ACK
ACK
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M34D64-WMN6 | 功能描述:电可擦除可编程只读存储器 5.5V 64K (8192x8) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M34D64WMN6P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit serial IC bus EEPROM with hardware write control on top quarter of memory |
| M34D64-WMN6P | 功能描述:电可擦除可编程只读存储器 64Kbit Serial EE RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M34D64-WMN6T | 功能描述:电可擦除可编程只读存储器 5.5V 64K (8192x8) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M34D64WMN6TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Kbit serial IC bus EEPROM with hardware write control on top quarter of memory |
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