参数资料
型号: M38C29FFAFP
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 5 MHz, MICROCONTROLLER, PQFP64
封装: 14 X 14 MM, 0.80 MM PITCH, PLASTIC, LQFP-64
文件页数: 59/104页
文件大小: 1327K
代理商: M38C29FFAFP
Rev.2.00
May 28, 2004
page 56 of 100
38C2 Group (A Version)
Table 11 Summary of 38C2 group (A version)’s flash memory version
FLASH MEMORY MODE
The 38C2 group (A version)’s flash memory version has an internal
new DINOR (DIvided bit line NOR) flash memory that can be rewrit-
ten with a single power source when VCC is 4.5 to 5.5 V, and 2 power
sources when VCC is 3.0 to 4.5 V.
For this flash memory, three flash memory modes are available in
which to read, program, and erase: the parallel I/O and standard
serial I/O modes in which the flash memory can be manipulated us-
ing a programmer and the CPU rewrite mode in which the flash
memory can be manipulated by the Central Processing Unit (CPU).
Summary
Table 11 lists the summary of the 38C2 group (A version)’s flash
memory version.
This flash memory version has some blocks on the flash memory as
shown in Figure 61 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU opera-
tion control program, the flash memory has a Boot ROM area that is
used to store a program to control rewriting in CPU rewrite and stan-
dard serial I/O modes. This Boot ROM area has had a standard se-
rial I/O mode control program stored in it when shipped from the
factory. However, the user can write a rewrite control program in this
area that suits the user’s application system. This Boot ROM area
can be rewritten in only parallel I/O mode.
Item
Power source voltage (Vcc)
Program/Erase VPP voltage (VPP)
Flash memory mode
Erase block division
User ROM area
Boot ROM area
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Specifications
VCC = 2.5 to 5.5 V (Note 1)
VCC = 2.5 to (VCC at program/erase) + 0.5 V (Note 2)
VPP = 4.5 to 5.5 V, VCC = 3.0 to 5.5 V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU rewrite mode
Refer to Fig. 61.
Not divided (4K bytes) (Note 3)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100 times
Available in parallel I/O mode and standard serial I/O mode
Notes 1: It is the rating value when Vcc = 5.0 to 5.5 V at program/erase.
2: It is the rating value when Vcc = 3.0 to 5.0 V at program/erase.
3: The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory. This Boot ROM area can be erased and
written in only parallel I/O mode.
相关PDF资料
PDF描述
M38K29F8LHP 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP64
M38K27M4L-XXXFP 8-BIT, MROM, 8 MHz, MICROCONTROLLER, PQFP64
M38K29RFS 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, CPGA100
M41ST85YMH6 1 TIMER(S), REAL TIME CLOCK, PDSO28
M41ST85YMX6TR 1 TIMER(S), REAL TIME CLOCK, PDSO28
相关代理商/技术参数
参数描述
M38C29FFAFP#U0 功能描述:IC 740/38C2 MCU FLASH 64LQFP RoHS:是 类别:集成电路 (IC) >> 嵌入式 - 微控制器, 系列:740/38000 产品培训模块:CAN Basics Part-1 CAN Basics Part-2 Electromagnetic Noise Reduction Techniques Part 1 M16C Product Overview Part 1 M16C Product Overview Part 2 标准包装:1 系列:M16C™ M32C/80/87 核心处理器:M32C/80 芯体尺寸:16/32-位 速度:32MHz 连通性:EBI/EMI,I²C,IEBus,IrDA,SIO,UART/USART 外围设备:DMA,POR,PWM,WDT 输入/输出数:121 程序存储器容量:384KB(384K x 8) 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:24K x 8 电压 - 电源 (Vcc/Vdd):3 V ~ 5.5 V 数据转换器:A/D 34x10b,D/A 2x8b 振荡器型:内部 工作温度:-20°C ~ 85°C 封装/外壳:144-LQFP 包装:托盘 产品目录页面:749 (CN2011-ZH PDF) 配用:R0K330879S001BE-ND - KIT DEV RSK M32C/87
M38C29FFAHP 制造商:Renesas Electronics Corporation 功能描述:MCU 3/5V 60K 64-LQFP - Trays
M38C29FFAHP#U0 制造商:Renesas Electronics Corporation 功能描述:MCU 8BIT 740 CISC 60KB FLASH 5V 64LQFP - Trays
M38C29FFFP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
M38C29FFHP 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER