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参数资料
型号： M38D29FFFP
元件分类： 微控制器/微处理器
英文描述： 8-BIT, FLASH, 6.25 MHz, MICROCONTROLLER, PQFP64
封装： 14 X 14 MM, 0.80 MM PITCH, PLASTIC, LQFP-64
文件页数： 60/136页
文件大小： 2856K
代理商： M38D29FFFP
Rev.3.02
Apr 10, 2008
Page 3 of 131
REJ03B0177-0302
38D2 Group
NOTE:
1. 12.5 MHz < f(XIN)
≤ 16 MHz is not available in the frequency/2 mode.
Table 1
Performance overview
Parameter
Function
Number of basic instructions
71
Instruction execution time
0.32
μs (Minimum instruction, Oscillation frequency 12.5 MHz)
Oscillation frequency
16 MHz (Maximum)(1)
Memory sizes
(QzROM version)
ROM
16 K to 60 K bytes
RAM
640 to 2048 bytes
Memory sizes
(Flash memory version)
ROM
60 K bytes
RAM
2048 bytes
I/O port
P0-P5, P60-P62
8-bit
× 6, 3-bit × 1 (24 pins sharing SEG)
Interrupt
18 sources, 16 vectors (includes key input interrupt)
Timer
8-bit
× 4, 16-bit × 2
Serial Interface
8-bit
× 2 (UART or Clock-synchronized)
PWM
10-bit
× 2, 16-bit × 1 (common to IGBT output)
A/D converter
10-bit
× 8 (operated in low-speed mode)
Watchdog timer
8-bit
× 1
ROM correction function
32 bytes
× 2 vectors
LED direct drive port
8 (average current: 15 mA, peak current: 30 mA, total current: 90 mA)
LCD drive control
circuit
Bias
1/2, 1/3
Duty
2, 3, 4
Common output
4
Segment output
24
Main clock generating circuits
Built-in (connect to external ceramic resonator or on-chip oscillator)
Sub-clock generating circuits
Built-in (connect to external quartz-crystal oscillator)
Power source voltage
(QzROM version)
In frequency/2 mode
(1)
f(XIN)
≤ 12.5 MHz 4.5 to 5.5 V
f(XIN)
≤ 8 MHz
4.0 to 5.5 V
f(XIN)
≤ 4 MHz
2.0 to 5.5 V
f(XIN)
≤ 2 MHz
1.8 to 5.5 V
In frequency/4 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.0 to 5.5 V
f(XIN)
≤ 4 MHz
1.8 to 5.5 V
In frequency/8 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.0 to 5.5 V
f(XIN)
≤ 4 MHz
1.8 to 5.5 V
In low-speed mode
1.8 to 5.5 V
Power source voltage
(Flash memory version)
In frequency/2 mode
(1)
f(XIN)
≤ 12.5 MHz 4.5 to 5.5 V
f(XIN)
≤ 8 MHz
4.0 to 5.5 V
f(XIN)
≤ 4 MHz
2.7 to 5.5 V
In frequency/4 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.7 to 5.5 V
In frequency/8 mode
f(XIN)
≤ 16 MHz
4.5 to 5.5 V
f(XIN)
≤ 8 MHz
2.7 to 5.5 V
In low-speed mode
2.7 to 5.5 V
Power dissipation
(QzROM version)
In frequency/2 mode
Std. 32 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25
°C)
In low-speed mode
Std. 18
μW (Vcc = 2.5 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25°C)
Power dissipation
(Flash memory version)
In frequency/2 mode
Std. 20 mW (Vcc = 5 V, f(XIN) = 12.5 MHz, Ta = 25
°C)
In low-speed mode
Std. 1.1 mW (Vcc = 2.7 V, f(XIN) = stop, f(XCIN) = 32 kHz, Ta = 25
°C)
Input/Output
characteristics
Input/Output withstand voltage
VCC
Output current
10 mA
Operating temperature range
-20 to 85
°C
Device structure
CMOS silicon gate
Package
64-pin plastic molded LQFP
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