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参数资料
| 型号： | M41ST87YWX6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 时钟/数据恢复及定时提取 |
| 英文描述： | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| 封装： | 0.300 INCH, PLASTIC, SO-28 |
| 文件页数： | 38/38页 |
| 文件大小： | 569K |
| 代理商： | M41ST87YWX6 |
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M41ST87Y, M41ST87W
Table 5. DC Characteristics
Note: 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 4.5 to 5.5V or 2.7 to 3.6V (except where noted).
3. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100K resistor. WDI internally pulled-down to VSS through 100K resistor.
4. Outputs Deselected.
5. External SRAM must match RTC SUPERVISOR chip VCC specification.
6. For rechargeable back-up, VBAT (max) may be considered VCC.
7. For PFO1 and PFO2 (if PFOD = '0'), SQW/FT (if SQWOD = '0'), and TPCLR pins (CMOS).
8. Conditioned output (ECON) can only sustain CMOS leakage current in the battery back-up mode. Higher leakage currents will re-
duce battery life.
9. TPCLR output can source –300A (typ) for VBAT = 2.9V.
10. For IRQ/OUT, SQW/FT (if SQWOD = '1'), PFO1 and PFO2 (if PFOD = '1'), RST, SDA, and F32k pins (Open Drain).
Sym
Parameter
Test Condition(1)
M41ST87Y
M41ST87W
Unit
Min
Typ
Max
Min
Typ
Max
IBAT
(2)
Battery Current
OSC ON
TA = 25°C, VCC = 0V,
VBAT = 3V
500
700
500
700
nA
Battery Current
OSC OFF
50
nA
ICC1
Supply Current
f = 400kHz
1.4
0.75
mA
ICC2
Supply Current
(Standby)
SCL, SDA = VCC –
0.3V
1
0.50
mA
ILI
(3)
Input Leakage
Current
0V
≤ VIN ≤ VCC
±1
A
Input Leakage
Current (PFI)
–25
2
25
–25
2
25
nA
ILO
(4)
Output Leakage
Current
0V
≤ VIN ≤ VCC
±1
A
IOUT1
(5)
VOUT Current
(Active)
VOUT1 > VCC – 0.3V
175
100
mA
IOUT2
VOUT Current
(Battery Back-up)
VOUT2 > VBAT – 0.3V
100
A
VIH
Input High Voltage
0.7VCC
VCC +
0.3
0.7VCC
VCC +
0.3
V
VIL
Input Low Voltage
–0.3
0.3VCC
–0.3
0.3VCC
V
VBAT
Battery Voltage
2.5
3.0
3.5(6)
2.5
3.0
3.5(6)
V
VOH
(7)
Output High Voltage
IOH = –1.0mA
2.4
V
VOHB
(8)
VOH (Battery Back-
up)
IOUT2 = –1.0A
(9)
2.9
V
VOL
Output Low Voltage
IOL = 3.0mA
0.4
V
Output Low Voltage
(Open Drain)(10)
IOL = 10mA
0.4
V
VPFD
Power Fail Deselect
THS Bit = 0
4.20
4.35
4.50
2.55
2.62
2.70
V
THS Bit = 1
4.50
4.60
4.75
2.80
2.88
3.00
V
VPFI1
PFI Input Threshold
VCC = 5V(Y)
VCC = 3V(W)
1.225
1.250
1.275
1.225
1.250
1.275
V
PFI Hysteresis
PFI Rising
20
70
20
70
mV
VPFI2
PFI Input Threshold
VCC = 5V(Y)
VCC = 3V(W)
1.225
1.250
1.275
1.225
1.250
1.275
V
PFI Hysteresis
PFI Rising
20
70
20
70
mV
VSO
Battery Back-up
Switchover
2.5
V
RSW
Switch Resistance
on Tamper Pin
500
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相关代理商/技术参数 |
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| M41ST95WMH6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95WMH6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
| M41ST95WMH6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.0V, 512 bit (64 bit X 8) Serial RTC (SPI) SRAM and NVRAM Supervisor |
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