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参数资料
| 型号： | M470L6423CK0 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity |
| 中文描述： | 512MB的DDR SDRAM内存模组（64Mx64基于铂64Mx 8 DDR内存）200pin的SODIMM 64 Non-ECC/Parity |
| 文件页数： | 11/14页 |
| 文件大小： | 121K |
| 代理商： | M470L6423CK0 |
200pin DDR SDRAM SODIMM
M470L6423CK0
Rev. 0.0 Aug. 2001
Note : 1. Maximum burst refresh of 8
2. The specific requirement is that DQS be valid(High or Low) on or before this CK edge. The case shown(DQS going from
High_Z to logic Low) applies when no writes were previously in progress on the bus. If a previous write was in progress,
DQS could be High at this time, depending on tDQSS.
3. The maximum limit for this parameter is not a device limit. The device will operate with a great value for this parameter,
but system performance (bus turnaround) will degrade accordingly.
4. A write command can be applied with t
RCD
satisfied after this command.
5. For registered DINNs, t
CL
and t
CH
are
≥
45% of the period including both the half period jitter (t
JIT(HP)
) of the PLL and the half
period jitter due to crosstalk (t
JIT
(crosstalk)
) on the DIMM.
Parameter
Symbol
-TCA2(DDR266A)
-TCB0(DDR266B)
-TCA0 (DDR200)
Unit
Note
Min
Max
Min
Max
Min
Max
Mode register set cycle time
tMRD
15
15
16
ns
DQ & DM setup time to DQS
tDS
0.5
0.5
0.6
ns
7,8,9
DQ & DM hold time to DQS
tDH
0.5
0.5
0.6
ns
7,8,9
DQ & DM input pulse width
tDIPW
1.75
1.75
2
ns
Power down exit time
tPDEX
10
10
10
ns
Exit self refresh to write command
tXSW
95
116
ns
Exit self refresh to bank active command
tXSA
75
75
80
ns
4
Exit self refresh to read command
tXSR
200
200
200
Cycle
Refresh interval time
64Mb, 128Mb
tREF
15.6
15.6
15.6
us
1
256Mb
7.8
7.8
7.8
us
1
Output DQS valid window
tQH
tHPmin
-tQHS
-
tHPmin
-tQHS
-
tHPmin
-tQHS
-
ns
5
Clock half period
tHP
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
tCLmin
or tCHmin
-
ns
Data hold skew factor
tQHS
0.75
0.75
0.8
ns
DQS write postamble time
tWPST
0.25
0.25
0.25
tCK
3
相关PDF资料 |
PDF描述 |
|---|---|
| M470L6423EN | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L6423EN | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
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