- 您现在的位置：买卖IC网 > PDF目录383300 > M470L6423CK0 (SAMSUNG SEMICONDUCTOR CO. LTD.) 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity PDF资料下载
参数资料
| 型号： | M470L6423CK0 |
| 厂商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity |
| 中文描述： | 512MB的DDR SDRAM内存模组（64Mx64基于铂64Mx 8 DDR内存）200pin的SODIMM 64 Non-ECC/Parity |
| 文件页数： | 3/14页 |
| 文件大小： | 121K |
| 代理商： | M470L6423CK0 |
200pin DDR SDRAM SODIMM
M470L6423CK0
M470L6423CK0 200pin DDR SDRAM SODIMM
64Mx64 200pin DDR SDRAM SODIMM based on DDP 64Mx8
Rev. 0.0 Aug. 2001
GENERAL DESCRIPTION
The Samsung M470L6423CK0 is 64M bit x 64 Double Data
Rate SDRAM high density memory modules based on 4th gen
of 256Mb DDR SDRAM respectively.
The Samsung M470L6423CK0 consists of eight CMOS DDP
64M x 8 bit with 4banks Double Data Rate SDRAMs in 54pin
TSOP-II(400mil) packages mounted on a 200pin glass-epoxy
substrate. Four 0.1uF decoupling capacitors are mounted on
the printed circuit board in parallel for each DDR SDRAM.
The M470L6423CK0 is Dual In-line Memory Modules and
intended for mounting into 200pin edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. Data I/O transactions are possible on both
edges of DQS. Range of operating frequencies, programmable
latencies and burst lengths allow the same device to be useful
for a variety of high bandwidth, high performance memory sys-
tem applications.
PIN DESCRIPTION
* These pins are not used in this module.
Pin Name
Function
A0 ~ A12
BA0 ~ BA1
DQ0 ~ DQ63
DQS0 ~ DQS7
CK0~ CK2,
CK0~ CK2
Address input (Multiplexed)
Bank Select Address
Data input/output
Data Strobe input/output
Clock input
CKE0 ~ CKE1
CS0 ~ CS1
RAS
CAS
WE
DM0 ~ DM7
VDD
VDDQ
VSS
VREF
VDDSPD
Clock enable input
Chip select input
Row address strobe
Column address strobe
Write enable
Data - in mask
Power supply (2.5V)
Power Supply for DQS(2.5V)
Ground
Power supply for reference
Serial EEPROM Power
Supply (2.3V to 3.6V)
SDA
SCL
SA0 ~ 2
VDDID
NC
Serial data I/O
Serial clock
Address in EEPROM
VDD identification flag
No connection
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
Performance range
Part No.
M470L6423CK0-C(L)A2 133MHz(7.5ns@CL=2)
M470L6423CK0-C(L)B0 133MHz(7.5ns@CL=2.5)
M470L6423CK0-C(L)A0 100MHz(10ns@CL=2)
Power supply : Vdd: 2.5V
±
0.2V, Vddq: 2.5V
±
0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2, 2.5 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
PCB :
Height 1250 (mil)
, double sided component
Max Freq.
Interface
SSTL_2
FEATURE
PIN CONFIGURATIONS (Front side/back side)
Pin
Front
Pin
Front
Pin
Front
Pin
Back
Pin
Back
Pin
Back
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
33
35
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
VREF
VSS
DQ0
DQ1
VDD
DQS0
DQ2
VSS
DQ3
DQ8
VDD
DQ9
DQS1
VSS
DQ10
DQ11
VDD
CK0
/CK0
VSS
Key
DQ16
DQ17
VDD
DQS2
DQ18
VSS
DQ19
DQ24
VDD
DQ25
DQS3
VSS
DQ26
67
69
71
73
75
77
79
81
83
85
87
89
91
93
95
97
99
101
103
105
107
109
111
113
115
117
119
121
123
125
127
129
131
133
DQ27
VDD
CB0
CB1
VSS
DQS8
CB2
VDD
CB3
DU
VSS
CK2
/CK2
VDD
CKE1
DU(A13)
A12
A9
VSS
A7
A5
A3
A1
VDD
A10/AP
BA0
/WE
/S0
DU
VSS
DQ32
DQ33
VDD
DQS4
135
137
139
141
143
145
147
149
151
153
155
157
159
161
163
165
167
169
171
173
175
177
179
181
183
185
187
189
191
193
195
197
199
DQ34
VSS
DQ35
DQ40
VDD
DQ41
DQS5
VSS
DQ42
DQ43
VDD
VDD
VSS
VSS
DQ48
DQ49
VDD
DQS6
DQ50
VSS
DQ51
DQ56
VDD
DQ57
DQS7
VSS
DQ58
DQ59
VDD
SDA
SCL
VDDSPD
VDDID
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
VREF
VSS
DQ4
DQ5
VDD
DM0
DQ6
VSS
DQ7
DQ12
VDD
DQ13
DM1
VSS
DQ14
DQ15
VDD
VDD
VSS
VSS
Key
DQ20
DQ21
VDD
DM2
DQ22
VSS
DQ23
DQ28
VDD
DQ29
DM3
VSS
DQ30
68
70
72
74
76
78
80
82
84
86
88
90
92
94
96
98
100
102
104
106
108
110
112
114
116
118
120
122
124
126
128
130
132
134
DQ31
VDD
CB4
CB5
VSS
DM8
CB6
VDD
CB7
DU/(RESET)
VSS
VSS
VDD
VDD
CKE0
DU(BA2)
A11
A8
VSS
A6
A4
A2
A0
VDD
BA1
/RAS
/CAS
/S1
DU
VSS
DQ36
DQ37
VDD
DM4
136
138
140
142
144
146
148
150
152
154
156
158
160
162
164
166
168
170
172
174
176
178
180
182
184
186
188
190
192
194
196
198
200
DQ38
VSS
DQ39
DQ44
VDD
DQ45
DM5
VSS
DQ46
DQ47
VDD
/CK1
CK1
VSS
DQ52
DQ53
VDD
DM6
DQ54
VSS
DQ55
DQ60
VDD
DQ61
DM7
VSS
DQ62
DQ63
VDD
SA0
SA1
SA2
DU
相关PDF资料 |
PDF描述 |
|---|---|
| M470L6423EN | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 512MB Unbuffered SODIMM(based on sTSOP) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M470L6423EN | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-A2 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-B0 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
| M470L6423EN0-CLB3 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:512MB Unbuffered SODIMM(based on sTSOP) |
发布紧急采购，3分钟左右您将得到回复。