- 您现在的位置：买卖IC网 > PDF目录359066 > M48T512Y-70PM1 (意法半导体) Shielded Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Temperature Max:80 C RoHS Compliant: Yes PDF资料下载
参数资料
| 型号： | M48T512Y-70PM1 |
| 厂商： | 意法半导体 |
| 英文描述： | Shielded Multiconductor Cable; Number of Conductors:5; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Temperature Max:80 C RoHS Compliant: Yes |
| 中文描述： | 3.3 - 5V的4兆位的SRAM 512KB的x8计时器 |
| 文件页数： | 6/14页 |
| 文件大小： | 104K |
| 代理商： | M48T512Y-70PM1 |
M48T512Y, M48T512V
6/14
Table 7. Power Down/Up Trip Points DC Characteristics
(1)
(T
A
= 0 to 70 °C)
Symbol
Parameter
Note: 1. All voltages referenced to V
SS
.
2.
At 25°C.
Table 8. Power Down/Up AC Characteristics
(T
A
= 0 to 70 °C)
Symbol
Note: 1. V
PFD
(max) to V
PFD
(min) fall time of less than t
F
may result in deselection/write protection not occurring until 200μs after V
CC
pass-
es V
PFD
(min).
2. V
PFD
(min) to V
SS
fall time of less than t
FB
may cause corruption of RAM data.
Min
Typ
Max
Unit
V
PFD
Power-fail Deselect Voltage
M48T512Y
4.2
4.35
4.5
V
M48T512V
2.7
2.9
3.0
V
V
SO
Battery Back-up Switchover Voltage
M48T512Y
3.0
V
M48T512V
V
PFD
–100mV
t
DR (2)
Expected Data Retention Time
10
YEARS
Parameter
Min
Max
Unit
t
F (1)
V
PFD
(max) to V
PFD
(min) V
CC
Fall Time
300
μs
t
FB
(2)
V
PFD
(min) to V
SS
V
CC
Fall Time
M48T512Y
10
μs
M48T512V
150
μs
t
R
V
PFD
(min) to V
PFD
(max)
V
CC
Rise Time
10
μs
t
RB
V
SS
to V
PFD
(min) V
CC
Rise Time
1
μs
t
WP
Write Protect Time on V
CC
= V
PFD
40
150
μs
t
ER
E Recovery Time
40
200
ms
Figure 5. Power Down/Up Mode AC Waveforms
AI02385
VCC
VPFD (max)
INPUTS
(Including E)
OUTPUTS
DON'T CARE
HIGH-Z
tWP
tFB
tR
tRB
VALID
VALID
RECOGNIZED
RECOGNIZED
VPFD (min)
VSO
VSS
tER
tF
tDR
相关PDF资料 |
PDF描述 |
|---|---|
| M48T512Y-85PM1 | 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T512YPM | 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T513VPM | 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T513V-70CS1 | 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T513V-70PM1 | 3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M48T512Y-70PM1 | 制造商:STMicroelectronics 功能描述:NVRAM 10 YR BATTERY 4MB 48T512 |
| M48T512Y-85PM1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER? SRAM |
| M48T512YPM | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T513V | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
| M48T513V-70CS1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM |
发布紧急采购，3分钟左右您将得到回复。