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参数资料
型号： M50FLW080BN5G
厂商： STMICROELECTRONICS
元件分类： PROM
英文描述： 1M X 8 FLASH 3V PROM, 11 ns, PDSO40
封装： 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40
文件页数： 10/64页
文件大小： 534K
代理商： M50FLW080BN5G
Bus operations
M50FLW080A, M50FLW080B
18/64
3.1.2
Bus Write
Bus Write operations are used to write to the Command Interface or Firmware Hub/Low Pin
Count Registers. A valid Bus Write operation starts on the rising edge of the Clock signal
when Input Communication Frame, FWH4/LFRAME, is Low, VIL, and the correct Start cycle
is present on FWH0/LAD0-FWH3/LAD3. On subsequent Clock cycles the Host will send to
the memory:
●
ID Select, Address, other control bits, Data0-Data3 and Data4-Data7 on FWH0-FWH3
in FWH mode.
●
Cycle Type + Dir, Address, other control bits, Data0-Data3 and Data4-Data7 on LAD0-
LAD3.
The device responds by outputting Sync data until the wait states have elapsed.
See Table 7 and Table 9, and Figure 7 and Figure 9, for a description of the Field definitions
for each clock cycle of the transfer. See Table 26, and Figure 14, for details on the timings of
the signals.
3.1.3
Bus Abort
The Bus Abort operation can be used to abort the current bus operation immediately. A Bus
Abort occurs when FWH4/LFRAME is driven Low, VIL, during the bus operation. The device
puts the Input/Output Communication pins, FWH0/LAD0-FWH3/LAD3, to high impedance.
Note that, during a Bus Write operation, the Command Interface starts executing the
command as soon as the data is fully received. A Bus Abort during the final TAR cycles is
not guaranteed to abort the command. The bus, however, will be released immediately.
3.1.4
Standby
When FWH4/LFRAME is High, VIH, the device is put into Standby mode, where
FWH0/LAD0-FWH3/LAD3 are put into a high-impedance state and the Supply Current is
reduced to the Standby level, ICC1.
3.1.5
Reset
During the Reset mode, all internal circuits are switched off, the device is deselected, and
the outputs are put to high-impedance. The device is in the Reset mode when Interface
Reset, RP, or CPU Reset, INIT, is driven Low, VIL. RP or INIT must be held Low, VIL, for
tPLPH. The memory reverts to the Read mode upon return from the Reset mode, and the
Lock Registers return to their default states regardless of their states before Reset. If RP or
INIT goes Low, VIL, during a Program or Erase operation, the operation is aborted and the
affected memory cells no longer contain valid data. The device can take up to tPLRH to abort
a Program or Erase operation.
3.1.6
Block Protection
Block Protection can be forced using the signals Top Block Lock, TBL, and Write Protect,
WP, regardless of the state of the Lock Registers.
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相关代理商/技术参数
参数描述
M50FLW080BN5P 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BN5T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BN5TG 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2
M50FLW080BN5TP 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
M50FLW080BNB5 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
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