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参数资料
| 型号： | M50FLW080BN5G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 1M X 8 FLASH 3V PROM, 11 ns, PDSO40 |
| 封装： | 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40 |
| 文件页数： | 8/64页 |
| 文件大小： | 534K |
| 代理商： | M50FLW080BN5G |
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Signal descriptions
M50FLW080A, M50FLW080B
2.3
Supply signal descriptions
The Supply Signals are the same for both interfaces.
2.3.1
VCC supply voltage
The VCC Supply Voltage supplies the power for all operations (read, program, erase, etc.).
The Command Interface is disabled when the VCC Supply Voltage is less than the Lockout
Voltage, VLKO. This is to prevent Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time, the operation aborts, and the memory contents
that were being altered will be invalid. After VCC becomes valid, the Command Interface is
reset to Read mode.
A 0.1F capacitor should be connected between the VCC Supply Voltage pins and the VSS
Ground pin to decouple the current surges from the power supply. Both VCC Supply Voltage
pins must be connected to the power supply. The PCB track widths must be sufficient to
carry the currents required during program and erase operations.
2.3.2
VPP optional supply voltage
The VPP Optional Supply Voltage pin is used to select the Fast Program (see the Quadruple
Byte Program command description in A/A Mux interface and the Double/Quadruple Byte
Program command description in FWH mode) and Fast Erase options of the memory.
When VPP = VCC, program and erase operations take place as normal. When VPP = VPPH,
Fast Program and Erase operations are used. Any other voltage input to VPP will result in
undefined behavior, and should not be used.
VPP should not be set to VPPH for more than 80 hours during the life of the memory.
2.3.3
VSS ground
VSS is the reference for all the voltage measurements.
Table 5.
Memory identification input configuration (LPC mode)
Memory Number
ID3
ID2
A21
A20
1 (Boot memory)
VIL or float
1
2VIL or float
VIH
10
3VIH
VIL or float
0
1
4VIH
VIH
00
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M50FLW080BN5P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BN5T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BN5TG | 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| M50FLW080BN5TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080BNB5 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
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