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参数资料
| 型号： | M50FW040K5TG |
| 厂商： | 意法半导体 |
| 英文描述： | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| 中文描述： | 4兆位（512 KB的× 8，均匀块）3 - V电源供电的闪存固件枢纽 |
| 文件页数： | 15/53页 |
| 文件大小： | 278K |
| 代理商： | M50FW040K5TG |
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M50FW040
Signal descriptions
15/53
2.2.6
Ready/Busy Output (RB)
The Ready/Busy pin gives the status of the memory’s Program/Erase Controller. When
Ready/Busy is Low, V
OL
, the memory is busy with a Program or Erase operation and it will
not accept any additional Program or Erase command except the Program/Erase Suspend
command. When Ready/Busy is High, V
OH
, the memory is ready for any Read, Program or
Erase operation.
2.3
Supply signal descriptions
The Supply Signals are the same for both interfaces.
2.3.1
V
CC
supply voltage
The V
CC
Supply Voltage supplies the power for all operations (Read, Program, Erase etc.).
The Command Interface is disabled when the V
CC
Supply Voltage is less than the Lockout
Voltage, V
LKO
. This prevents Bus Write operations from accidentally damaging the data
during power up, power down and power surges. If the Program/Erase Controller is
programming or erasing during this time then the operation aborts and the memory contents
being altered will be invalid. After V
CC
becomes valid the Command Interface is reset to
Read mode.
A 0.1μF capacitor should be connected between the V
CC
Supply Voltage pins and the V
SS
Ground pin to decouple the current surges from the power supply. Both V
CC
Supply Voltage
pins must be connected to the power supply. The PCB track widths must be sufficient to
carry the currents required during program and erase operations.
2.3.2
V
PP
optional supply voltage
The V
PP
Optional Supply Voltage pin is used to select the Fast Erase option of the memory
and to protect the memory. When V
PP
< V
PPLK
Program and Erase operations cannot be
performed and an error is reported in the Status Register if an attempt to change the
memory contents is made. When V
PP
= V
CC
Program and Erase operations take place as
normal. When V
PP
= V
PPH
Fast Erase operations are used. Any other voltage input to V
PP
will result in undefined behavior and should not be used.
V
PP
should not be set to V
PPH
for more than 80 hours during the life of the memory.
2.3.3
V
SS
ground
V
SS
is the reference for all the voltage measurements.
相关PDF资料 |
PDF描述 |
|---|---|
| M50FW040K5TP | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5G | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5P | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5TG | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5TP | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M50FW040K5TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| M50FW040N1 | 功能描述:闪存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M50FW040N1T | 功能描述:闪存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M50FW040N5 | 功能描述:闪存 3.0-3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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