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参数资料
| 型号： | M50FW040K5TG |
| 厂商： | 意法半导体 |
| 英文描述： | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| 中文描述： | 4兆位（512 KB的× 8，均匀块）3 - V电源供电的闪存固件枢纽 |
| 文件页数： | 23/53页 |
| 文件大小： | 278K |
| 代理商： | M50FW040K5TG |
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M50FW040
Command interface
23/53
4.4
Program command
The Program command can be used to program a value to one address in the memory array
at a time. Two Bus Write operations are required to issue the command; the second Bus
Write cycle latches the address and data in the internal state machine and starts the
Program/Erase Controller. Once the command is issued subsequent Bus Read operations
read the Status Register. See the section on the Status Register for details on the definitions
of the Status Register bits.
If the address falls in a protected block then the Program operation will abort, the data in the
memory array will not be changed and the Status Register will output the error.
During the Program operation the memory will only accept the Read Status Register
command and the Program/Erase Suspend command. All other commands will be ignored.
Typical Program times are given in
Table 12
.
Note that the Program command cannot change a bit set at ‘0’ back to ‘1’ and attempting to
do so will not cause any modification on its value. The Erase command must be used to set
all of the bits in the block to ‘1’.
See
Figure 18: Program flowchart and pseudo code
, for a suggested flowchart on using the
Program command.
4.5
Erase command
The Erase command can be used to erase a block. Two Bus Write operations are required
to issue the command; the second Bus Write cycle latches the block address in the internal
state machine and starts the Program/Erase Controller. Once the command is issued
subsequent Bus Read operations read the Status Register. See the section on the Status
Register for details on the definitions of the Status Register bits.
If the block is protected then the Erase operation will abort, the data in the block will not be
changed and the Status Register will output the error.
During the Erase operation the memory will only accept the Read Status Register command
and the Program/Erase Suspend command. All other commands will be ignored. Typical
Erase times are given in
Table 12
.
The Erase command sets all of the bits in the block to ‘1’. All previous data in the block is
lost.
See
Figure 20: Erase flowchart and pseudo code
, for a suggested flowchart on using the
Erase command.
4.6
Clear Status Register command
The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the Status
Register to ‘0’. One Bus Write is required to issue the Clear Status Register command.
Once the command is issued the memory returns to its previous mode, subsequent Bus
Read operations continue to output the same data.
The bits in the Status Register are sticky and do not automatically return to ‘0’ when a new
Program or Erase command is issued. If an error occurs then it is essential to clear any error
bits in the Status Register by issuing the Clear Status Register command before attempting
a new Program or Erase command.
相关PDF资料 |
PDF描述 |
|---|---|
| M50FW040K5TP | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5G | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5P | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5TG | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N5TP | 4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M50FW040K5TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4-Mbit (512 Kb x8, uniform block) 3-V supply firmware hub Flash memory |
| M50FW040N | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4 Mbit 512Kb x8, Uniform Block 3V Supply Firmware Hub Flash Memory |
| M50FW040N1 | 功能描述:闪存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M50FW040N1T | 功能描述:闪存 3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M50FW040N5 | 功能描述:闪存 3.0-3.6V 4M (512Kx8) RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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