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参数资料
型号： M58LR128FB95ZB6E
厂商： NUMONYX
元件分类： PROM
英文描述： 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56
封装： 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56
文件页数： 18/82页
文件大小： 1303K
代理商： M58LR128FB95ZB6E
25/82
M58LR128FT, M58LR128FB
CONFIGURATION REGISTER
The Configuration Register is used to configure
the type of bus access that the memory will per-
form. Refer to Read Modes section for details on
read operations.
The Configuration Register is set through the
Command Interface using the Set Configuration
Register command. After a reset or power-up the
device is configured for asynchronous read (CR15
= 1). The Configuration Register bits are described
in Table 10. They specify the selection of the burst
length, burst type, burst X latency and the read op-
eration. Refer to Figures 6 and 7 for examples of
synchronous burst configurations.
Read Select Bit (CR15)
The Read Select bit, CR15, is used to switch be-
tween Asynchronous and Synchronous Read op-
erations.
When the Read Select bit is set to ’1’, read opera-
tions are asynchronous; when the Read Select bit
is set to ’0’, read operations are synchronous.
Synchronous Burst Read is supported in both pa-
rameter and main blocks and can be performed
across banks.
On reset or power-up the Read Select bit is set to
’1’ for asynchronous access (default).
X-Latency Bits (CR13-CR11)
The X-Latency bits are used during Synchronous
Read operations to set the number of clock cycles
between the address being latched and the first
data becoming available.
For correct operation the X-Latency bits can only
assume the values in Table 10., Configuration
Register.
The correspondence between X-Latency settings
and the maximum sustainable frequency must be
calculated taking into account some system pa-
rameters. Two conditions must be satisfied:
1.
Depending on whether tAVK_CPU or tDELAY is
supplied either one of the following two
equations must be satisfied:
(n + 1) tK ≥ tAVQV - tAVK_CPU + tQVK_CPU
(n + 2) tK ≥ tAVQV + tDELAY + tQVK_CPU
2.
and also
tK > tKQV + tQVK_CPU
where
■
n is the chosen X-Latency configuration code
■
tK is the clock period
■
tAVK_CPU is clock to address valid, L Low, or E
Low, whichever occurs last
■
tDELAY is address valid, L Low, or E Low to
clock, whichever occurs last
■
tQVK_CPU is the data setup time required by
the system CPU,
■
tKQV is the clock to data valid time
■
tAVQV is the random access time of the device.
Refer to Figure 6., X-Latency and Data Output
Configuration Example.
Wait Polarity Bit (CR10)
The Wait Polarity bit is used to set the polarity of
the Wait signal used in Synchronous Burst Read
mode. During Synchronous Burst Read mode the
Wait signal indicates whether the data output are
valid or a WAIT state must be inserted.
When the Wait Polarity bit is set to ‘0’ the Wait sig-
nal is active Low. When the Wait Polarity bit is set
to ‘1’ the Wait signal is active High (default).
Data Output Configuration Bit (CR9)
The Data Output Configuration bit is used to con-
figure the output to remain valid for either one or
two clock cycles during synchronous mode.
When the Data Output Configuration Bit is ’0’ the
output data is valid for one clock cycle, when the
Data Output Configuration Bit is ’1’ the output data
is valid for two clock cycles.
The Data Output Configuration must be config-
ured using the following condition:
■
tK > tKQV + tQVK_CPU
where
■
tK is the clock period
■
tQVK_CPU is the data setup time required by
the system CPU
■
tKQV is the clock to data valid time.
If this condition is not satisfied, the Data Output
Configuration bit should be set to ‘1’ (two clock cy-
cles). Refer to Figure 6., X-Latency and Data Out-
put Configuration Example.
Wait Configuration Bit (CR8)
The Wait Configuration bit is used to control the
timing of the Wait output pin, WAIT, in Synchro-
nous Burst Read mode.
When WAIT is asserted, Data is Not Valid and
when WAIT is deasserted, Data is Valid.
When the Wait Configuration bit is Low (set to ’0’)
the Wait output pin is asserted during the wait
state. When the Wait Configuration bit is High (set
to ’1’) (default) the Wait output pin is asserted one
clock cycle before the wait state.
Burst Type Bit (CR7)
The Burst Type bit determines the sequence of ad-
dresses read during Synchronous Burst Reads.
The Burst Type bit is High (set to ’1’), as the mem-
ory outputs from sequential addresses only.
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相关代理商/技术参数
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M58LR128FB95ZB6F 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FB95ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
M58LR128FT85ZB6E 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
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