- 您现在的位置：买卖IC网 > PDF目录180232 > M58LR128FB95ZB6E (NUMONYX) 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 PDF资料下载
参数资料
| 型号： | M58LR128FB95ZB6E |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 8M X 16 FLASH 1.8V PROM, 95 ns, PBGA56 |
| 封装： | 7.70 X 9 MM, 0.75 MM PITCH, LEAD FREE, VFBGA-56 |
| 文件页数： | 9/82页 |
| 文件大小： | 1303K |
| 代理商： | M58LR128FB95ZB6E |
第1页第2页第3页第4页第5页第6页第7页第8页当前第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页第73页第74页第75页第76页第77页第78页第79页第80页第81页第82页
17/82
M58LR128FT, M58LR128FB
A0 = CR0, A1 = CR1, …, A15 = CR15. Addresses
A16- A22 are ignored.
Once the Set Configuration Register command
has been issued, read operations will output the
array contents.
The Read Electronic Signature command is re-
quired to read the updated contents of the Config-
uration Register.
Block Lock Command
The Block Lock command is used to lock a block
and prevent program or erase operations from
changing the data in it. All blocks are locked after
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
■
The first bus cycle sets up the Block Lock
command.
■
The second Bus Write cycle latches the block
address and locks the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 14. shows the Lock Status after issuing a
Block Lock command.
Once set, the Block Lock bits remain set until a
hardware reset or power-down/power-up. They
are cleared by a Block Unlock command.
Refer to the section, Block Locking, for a detailed
explanation.
See
Code, for a flowchart for using the Lock command.
Block Unlock Command
The Block Unlock command is used to unlock a
block, allowing the block to be programmed or
erased.
Two Bus Write cycles are required to issue the
Block Unlock command.
■
The first bus cycle sets up the Block Unlock
command.
■
The second Bus Write cycle latches the block
address and unlocks the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table 14. shows the protection status after issuing
a Block Unlock command.
Refer to the section, Block Locking, for a detailed
explanation
and
Code, for a flowchart for using the Block Unlock
command.
Block Lock-Down Command
The Block Lock-Down command is used to lock-
down a locked or unlocked block.
A locked-down block cannot be programmed or
erased. The lock status of a locked-down block
cannot be changed when WP is low, VIL. When
WP is high, VIH, the lock-down function is disabled
and the locked blocks can be individually unlocked
by the Block Unlock command.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■
The first bus cycle sets up the Block Lock-
Down command.
■
The second Bus Write cycle latches the block
address and locks-down the block.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table 14. shows the Lock Status af-
ter issuing a Block Lock-Down command.
Refer to the section, Block Locking, for a detailed
explanation
and
Code, for a flowchart for using the Lock-Down
command.
相关PDF资料 |
PDF描述 |
|---|---|
| M58LW128A150N1 | 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 |
| M58WR064HU70ZB6U | 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44 |
| M59DR032F100N1T | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| M5F7924 | 24 V FIXED NEGATIVE REGULATOR, PSFM3 |
| M5F7920 | 20 V FIXED NEGATIVE REGULATOR, PSFM3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M58LR128FB95ZB6F | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FB95ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
| M58LR128FT85ZB6E | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory |
发布紧急采购，3分钟左右您将得到回复。