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参数资料
| 型号： | M6035P-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-3P |
| 文件页数： | 1/5页 |
| 文件大小： | 110K |
| 代理商： | M6035P-E3/45 |
New Product
M6035P thru M6060P
Vishay General Semiconductor
Document Number: 88980
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Low power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
35 V, 45 V, 60 V
IFSM
350 A
VF at IF = 30 A
0.50 V, 0.56 V
TJ max.
150 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035P
M6045P
M6060P
UNIT
Maximum repetitive peak reverse voltage
VRRM
35
45
60
V
Maximum average forward rectified
current (Fig. 1)
total device
per diode
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load per diode
IFSM
350
A
Peak repetitive reverse current at tp = 2 s, 1 kHz
per diode
IRRM
2.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/s
Operating junction and storage temperature range
TJ, TSTG
- 65 to + 150
°C
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