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参数资料
| 型号： | M6035P-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-3P |
| 文件页数： | 3/5页 |
| 文件大小： | 110K |
| 代理商： | M6035P-E3/45 |
New Product
M6035P thru M6060P
Vishay General Semiconductor
Document Number: 88980
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Forward Power Loss Characteristics Per Diode
Figure 4. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Figure 5. Typical Instantaneous Forward Characteristics Per Diode
D = t
p/T
t
p
T
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
M6060P
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
400
300
200
100
1
10
100
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
M6035P & M6045P
Figure 6. Typical Instantaneous Forward Characteristics Per Diode
Figure 7. Typical Reverse Characteristics Per Diode
Figure 8. Typical Reverse Characteristics Per Diode
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
M6060P
0.01
0.1
1
10
100
1000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
M6035P & M6045P
0.01
0.1
1
10
100
1000
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
M6060P
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| M6060P-E3/45 | 30 A, 60 V, SILICON, RECTIFIER DIODE, TO-247AD |
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