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参数资料
| 型号： | M6035P-E3/45 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 整流器 |
| 英文描述： | 30 A, 35 V, SILICON, RECTIFIER DIODE, TO-247AD |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-3P |
| 文件页数： | 2/5页 |
| 文件大小： | 110K |
| 代理商： | M6035P-E3/45 |
New Product
M6035P thru M6060P
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88980
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
M6035P
M6045P
M6060P
UNIT
TYP.
MAX.
TYP.
MAX.
Instantaneous forward voltage per diode (1)
IF = 10 A
IF = 20 A
IF = 30 A
TJ = 25 °C
VF
0.42
0.49
0.54
-
0.60
0.43
0.52
0.59
-
0.64
V
IF = 10 A
IF = 20 A
IF = 30 A
TJ = 125 °C
0.31
0.42
0.50
-
0.55
0.33
0.47
0.56
-
0.60
Reverse current per diode (2)
VR
TJ = 25 °C
TJ = 125 °C
IR
135
110
600
160
240
140
600
160
A
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
1150
-
1090
-
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M6035P
M6045P
M6060P
UNIT
Typical thermal resistance per diode
RθJC
2.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
M6045P-E3/45
6.14
45
30/tube
Tube
M6060P-E3/45
6.14
45
30/tube
Tube
Figure 1. Forward Current Derating Curve
0
10
20
30
40
50
60
70
0
25
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Forward Power Loss Characteristics Per Diode
0
2
4
6
8
10
12
14
16
0
5
10
15
20
25
30
35
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(
W
)
M6035P & M6045P
D = t
p/T
t
p
T
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