参数资料
型号: M68Z128
厂商: 意法半导体
英文描述: 5V, 1Mbit(128Kbx8) Low Power SRAM with Output Enable(1Mb低功耗SRAM)
中文描述: 5V的,一个容量为1Mbit(128Kbx8)低功率SRAM的输出使能(1兆低功耗的SRAM)
文件页数: 5/12页
文件大小: 69K
代理商: M68Z128
Symbol
Parameter
M68Z128
Unit
-55
Min
Max
t
AVAV
Read Cycle Time
55
ns
t
AVQV(1)
Address Validto Output Valid
55
ns
t
E1LQV(1)
Chip Enable 1 Low to Output Valid
55
ns
t
E2HQV(1)
Chip Enable 2 High to Output Valid
55
ns
t
GLQV(1)
Output Enable Low to Output Valid
20
ns
t
E1LQX(3)
Chip Enable 1 Low to Output Transition
5
ns
t
E2HQX
t
GLQX(3)
(3)
Chip Enable 2 High to Output Transition
5
ns
Output Enable Low to Output Transition
0
ns
t
E1HQZ(2,3)
Chip Enable 1 High to Output Hi-Z
20
ns
t
E2LQZ
(2,3)
Chip Enable 2 Low to Output Hi-Z
20
ns
t
GHQZ(2,3)
Output Enable High to Output Hi-Z
20
ns
t
AXQX(1)
Address Transition to Output Transition
5
ns
t
PU
Chip Enable 1 Low or Chip Enable 2 High to Power Up
0
ns
t
PD
Chip Enable 1 High or Chip Enable 2 Low to Power Down
55
ns
Notes:
1. C
L
= 100pF(see Figure 4)
2. C
= 5pF (see Figure 4)
3. At any given temperature and voltage condition,t
EIHQZ
+ t
EZHQZ
isless than t
EILQX
and t
EZLQX
, t
GHQZ
is less thant
GLQX
for any
given device.
Table7. Read and Standby Modes AC Characteristics
(T
A
= 0 to 70
°
C; V
CC
= 5V
±
10%)
AI01078
tAVAV
tAVQV
tAXQX
A0-A16
DQ0-DQ7
VALID
DATA VALID
Figure 5. AddressControlled, ReadMode AC Waveforms
Note:
E1 = Low, E2 = High, G = Low, W = High
5/12
M68Z128
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