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参数资料
| 型号： | M93C06-DS3TG |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封装： | 3 X 3 MM, LEAD FREE, TSSOP-8 |
| 文件页数： | 26/31页 |
| 文件大小： | 533K |
| 代理商： | M93C06-DS3TG |
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M93C86, M93C76, M93C66, M93C56, M93C46, M93C06
4/31
SUMMARY DESCRIPTION
These electrically erasable programmable memo-
ry (EEPROM) devices are accessed through a Se-
rial Data Input (D) and Serial Data Output (Q)
using the MICROWIRE bus protocol.
Figure 2. Logic Diagram
Table 1. Signal Names
The memory array organization may be divided
into either bytes (x8) or words (x16) which may be
selected by a signal applied on Organization Se-
lect (ORG). The bit, byte and word sizes of the
memories are as shown in Table 2..
Table 2. Memory Size versus Organization
Note: 1. Not for New Design
The M93Cx6 is accessed by a set of instructions,
as summarized in Table 3., and in more detail in
Table 3. Instruction Set for the M93Cx6
A Read Data from Memory (READ) instruction
loads the address of the first byte or word to be
read in an internal address register. The data at
this address is then clocked out serially. The ad-
dress register is automatically incremented after
the data is output and, if Chip Select Input (S) is
held High, the M93Cx6 can output a sequential
stream of data bytes or words. In this way, the
memory can be read as a data stream from eight
to 16384 bits long (in the case of the M93C86), or
continuously (the address counter automatically
rolls over to 00h when the highest address is
reached).
Programming is internally self-timed (the external
clock signal on Serial Clock (C) may be stopped or
left running after the start of a Write cycle) and
does not require an Erase cycle prior to the Write
instruction. The Write instruction writes 8 or 16 bits
at a time into one of the byte or word locations of
the M93Cx6. After the start of the programming cy-
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
ORG
Organisation Select
VCC
Supply Voltage
VSS
Ground
AI01928
D
VCC
M93Cx6
VSS
C
Q
S
ORG
Device
Number
of Bits
Number
of 8-bit
Bytes
Number
of 16-bit
Words
M93C86
16384
2048
1024
M93C76
8192
1024
512
M93C66
4096
512
256
M93C56
2048
256
128
M93C46
1024
128
64
M93C061
256
32
16
Instruction
Description
Data
READ
Read Data from Memory
Byte or Word
WRITE
Write Data to Memory
Byte or Word
EWEN
Erase/Write Enable
EWDS
Erase/Write Disable
ERASE
Erase Byte or Word
Byte or Word
ERAL
Erase All Memory
WRAL
Write All Memory
with same Data
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| MB84VD22183EA-85PBS | SPECIALTY MEMORY CIRCUIT, PBGA71 |
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| M93C66-WMB3TP | 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93C06DW | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| M93C06MN | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit, 1Kbit and 256bit 8-bit or 16-bit wide |
| M93C06-MN6 | 功能描述:电可擦除可编程只读存储器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C06-MN6T | 功能描述:电可擦除可编程只读存储器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93C06-WBN6 | 功能描述:电可擦除可编程只读存储器 256 (32x8 or 16x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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