参数资料
型号: M93C66-WMB3TP
厂商: STMICROELECTRONICS
元件分类: PROM
英文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
封装: 2 X 3 MM, LEAD FREE, MLP-8
文件页数: 2/31页
文件大小: 611K
代理商: M93C66-WMB3TP
M93C86, M93C76, M93C66, M93C56, M93C46
10/31
Erase All
The Erase All Memory (ERAL) instruction erases
the whole memory (all memory bits are set to 1).
The format of the instruction requires that a dum-
my address be provided. The Erase cycle is con-
ducted in the same way as the Erase instruction
(ERASE). The completion of the cycle can be de-
tected by monitoring the Ready/Busy line, as de-
scribed in the READY/BUSY STATUS section.
Write All
As with the Erase All Memory (ERAL) instruction,
the format of the Write All Memory with same Data
(WRAL) instruction requires that a dummy ad-
dress be provided. As with the Write Data to Mem-
ory (WRITE) instruction, the format of the Write All
Memory with same Data (WRAL) instruction re-
quires that an 8-bit data byte, or 16-bit data word,
be provided. This value is written to all the ad-
dresses of the memory device. The completion of
the cycle can be detected by monitoring the
Ready/Busy line, as described next.
Figure 6. WRAL Sequence
Note: For the meanings of Xn and Dn, please see Table 5., Table 6. and Table 7..
AI00880C
S
WRITE
ALL
DATA IN
D
Q
ADDR
OP
CODE
Dn
D0
BUSY
READY
CHECK
STATUS
1
0 0
0
1 Xn X0
相关PDF资料
PDF描述
MT48LC4M16A2P-75:G 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
M93C06-MB6G 16 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8
MT48LC4M16A2F4-6IT:G 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA54
MT46V32M8FG-6TIT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60
MT46V32M8BG-6AT:G 32M X 8 DDR DRAM, 0.7 ns, PBGA60
相关代理商/技术参数
参数描述
M93C66-WMN3TP/S 制造商:STMicroelectronics 功能描述:EEPROM SERL-MICROWIRE 8KBIT 1KX8/512X16 3.3V/5V 8PIN SO N - Tape and Reel
M93C66-WMN6 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M93C-66WMN6P 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit (8-bit or 16-bit wide) MICROWIRE Serial Access EEPROM
M93C66-WMN6P 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
M93C66-WMN6T 功能描述:电可擦除可编程只读存储器 4K (512x8 or 256x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8