参数资料
型号: M93S56-WBN3TG
厂商: 意法半导体
元件分类: DRAM
英文描述: 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection
中文描述: 4Kbit,2Kbit和1Kbit 16位宽MICROWIRE串行EEPROM的访问与街区保护
文件页数: 16/34页
文件大小: 525K
代理商: M93S56-WBN3TG
M93S66, M93S56, M93S46
16/34
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings" table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 4. Absolute Maximum Ratings
Note: 1. Compliant with JEDEC Std J-STD-020B (for small body, Sn-Pb or Pb assembly), the ST ECOPACK
7191395 specification, and
the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU
2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500
, R2=500
)
Symbol
Parameter
Min.
Max.
Unit
T
STG
Storage Temperature
–65
150
°C
T
LEAD
Lead Temperature during Soldering
See note
1
°C
V
OUT
Output range (Q = V
OH
or Hi-Z)
–0.50
V
CC
+0.5
V
V
IN
Input range
–0.50
V
CC
+1
V
V
CC
Supply Voltage
–0.50
6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
2
–4000
4000
V
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M93S56-WBN6P 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C,2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.173",4.40mm 宽) 供应商设备封装:8-MFP 包装:带卷 (TR)
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