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参数资料
| 型号： | M93S56-WBN3TG |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位宽MICROWIRE串行EEPROM的访问与街区保护 |
| 文件页数： | 33/34页 |
| 文件大小： | 525K |
| 代理商： | M93S56-WBN3TG |
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M93S66, M93S56, M93S46
REVISION HISTORY
Table 26. Document Revision History
Date
Rev.
Description of Revision
07-Mar-2002
2.0
Document reformatted, and reworded, using the new template. Temperature range 1 removed.
TSSOP8 (3x3mm) package added. New products, identified by the process letter W, added,
with fc(max) increased to 1MHz for -R voltage range, and to 2MHz for all other ranges (and
corresponding parameters adjusted).
26-Mar-2003
2.1
Value of standby current (max) corrected in DC characteristics tables for -W and -R ranges
V
OUT
and V
IN
separated from V
IO
in the Absolute Maximum Ratings table
14-Apr-2003
2.2
Values corrected in AC characteristics tables for -W range (tSLSH, tDVCH, tCLSL) for devices
with Process Identification Letter W.
23-May-2003
2.3
Standby current corrected for -R range. Four missing parameters restored to all AC
Characteristics tables
24-Nov-2003
3.0
Table of contents, and Pb-free options added. V
IL
(min) improved to -0.45V.
19-Apr-2004
4.0
Absolute Maximum Ratings for V
IO
(min) and V
CC
(min) changed. Soldering temperature
information clarified for RoHS compliant devices. Device Grade 3 clarified, with reference to
HRCF and automotive environments. Process identification letter “G” information added
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| M93S56-WBN3T | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3P | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3G | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN3 | Triple 3-Input Positive-NAND Gates 14-PDIP -40 to 85 |
| M93S56-RMN6TP | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M93S56-WBN3TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6 | 功能描述:电可擦除可编程只读存储器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93S56-WBN6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6P | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| M93S56-WBN6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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