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参数资料
| 型号： | M93S56-WBN3TG |
| 厂商： | 意法半导体 |
| 元件分类： | DRAM |
| 英文描述： | 4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| 中文描述： | 4Kbit，2Kbit和1Kbit 16位宽MICROWIRE串行EEPROM的访问与街区保护 |
| 文件页数： | 17/34页 |
| 文件大小： | 525K |
| 代理商： | M93S56-WBN3TG |
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M93S66, M93S56, M93S46
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC Characteristic tables that follow are de-
rived from tests performed under the Measure-
ment Conditions summarized in the relevant
tables. Designers should check that the operating
conditions in their circuit match the measurement
conditions when relying on the quoted parame-
ters.
Table 5. Operating Conditions (M93Sx6)
Table 6. Operating Conditions (M93Sx6-W)
Table 7. Operating Conditions (M93Sx6-R)
Table 8. AC Measurement Conditions (M93Sx6)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Table 9. AC Measurement Conditions (M93Sx6-W and M93Sx6-R)
Note: Output Hi-Z is defined as the point where data out is no longer driven.
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
4.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Ambient Operating Temperature (Device Grade 3)
–40
125
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
2.5
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
V
CC
Supply Voltage
1.8
5.5
V
T
A
Ambient Operating Temperature (Device Grade 6)
–40
85
°C
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.4 V to 2.4 V
V
Input Timing Reference Voltages
1.0 V and 2.0 V
V
Output Timing Reference Voltages
0.8 V and 2.0 V
V
Symbol
Parameter
Min.
Max.
Unit
C
L
Load Capacitance
100
pF
Input Rise and Fall Times
50
ns
Input Pulse Voltages
0.2V
CC
to 0.8V
CC
V
Input Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
Output Timing Reference Voltages
0.3V
CC
to 0.7V
CC
V
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相关代理商/技术参数 |
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| M93S56-WBN3TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6 | 功能描述:电可擦除可编程只读存储器 5.5V 2K (128x16) RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| M93S56-WBN6G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
| M93S56-WBN6P | 功能描述:IC EEPROM 2KBIT 2MHZ 8DIP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.173"，4.40mm 宽） 供应商设备封装:8-MFP 包装:带卷 (TR) |
| M93S56-WBN6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:4Kbit, 2Kbit and 1Kbit 16-bit wide MICROWIRE Serial Access EEPROM with Block Protection |
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