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参数资料
| 型号： | MA28151 |
| 厂商： | Dynex Semiconductor Ltd. |
| 英文描述： | Radiation hard Programmable Communication Interface |
| 中文描述： | 辐射硬可编程通信接口 |
| 文件页数： | 16/22页 |
| 文件大小： | 186K |
| 代理商： | MA28151 |
MA28151
16/22
6. DC CHARACTERISTICS AND RATINGS
Parameter
Min
Max
Units
Supply Voltage
-0.5
7
V
Input Voltage
-0.3
V
DD
+0.3
V
Current Through Any Pin
-20
+20
mA
Operating Temperature
-55
125
°
C
Storage Temperature
-65
150
°
C
Note:
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functional operation of the device at these conditions, or at
any other condition above those indicated in the operations
section of this specification, is not implied. Exposure to
absolute maximum rating conditions for extended periods
may affect device reliability.
Figure 25: Absolute Maximum Ratings
Total dose radiation not
exceeding 3x10
5
Rad(SI)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
DD
V
IH
V
IL
V
OH
V
OL
I
IN
Supply Voltage
-
4.5
5.0
5.5
V
Input High Voltage
-
2.2
-
-
V
Input Low Voltage
-
-
-
0.8
V
Output High Voltage
I
OH
= -2mA
I
OL
= 5mA
V
DD
= 5.5V,
V
IN
= V
SS
or V
DD
V
DD
= 5.5V,
V
IN
= V
SS
or V
DD
Static, V
DD
= 5.5V
V
DD
-0.5
-
-
-
V
Output Low Voltage
-
V
SS
+0.4
±
10
V
μ
A
Input Leakage Current (Note 1)
-
-
I
OZ
Tristate Leakage Current (Note 1)
-
-
±
50
μ
A
I
DD
Power Supply Current
-
0.1
10
mA
V
DD
= 5V
±
10%, over full operating temperature range.
Mil-Std-883, method 5005, subgroups 1, 2, 3
Note 1: Guaranteed but not tested at -55
°
C
Figure 26: Electrical Characteristics
Subgroup
Definition
1
Static characteristics specified in Figure 26 at +25
°
C
2
Static characteristics specified in Figure 26 at +125
°
C
3
Static characteristics specified in Figure 26 at -55
°
C
7
Functional characteristics specified in Figure 24 at +25
°
C
8A
Functional characteristics specified in Figure 24 at +125
°
C
8B
Functional characteristics specified in Figure 24 at -55
°
C
9
Switching characteristics specified in Figure 23 at +25
°
C
10
Switching characteristics specified in Figure 23 at +125
°
C
11
Switching characteristics specified in Figure 23 at -55
°
C
Figure 27: Definition of Mil-Std-883, Method 5005 Subgroups
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MA28151GBB | 功能描述:专用陶瓷电容器 HF CHIP RoHS:否 制造商:Panasonic Electronic Components 电容:470 pF 容差:10 % 电压额定值:250 VAC 工作温度范围:- 25 C to + 125 C 端接类型:SMD/SMT 外壳代码 - in: 外壳代码 - mm: |
| MA28151GBN | 功能描述:专用陶瓷电容器 HF CHIP RoHS:否 制造商:Panasonic Electronic Components 电容:470 pF 容差:10 % 电压额定值:250 VAC 工作温度范围:- 25 C to + 125 C 端接类型:SMD/SMT 外壳代码 - in: 外壳代码 - mm: |
| MA28151JBB | 功能描述:专用陶瓷电容器 HF CHIP RoHS:否 制造商:Panasonic Electronic Components 电容:470 pF 容差:10 % 电压额定值:250 VAC 工作温度范围:- 25 C to + 125 C 端接类型:SMD/SMT 外壳代码 - in: 外壳代码 - mm: |
| MA28151JBN | 功能描述:专用陶瓷电容器 HF CHIP RoHS:否 制造商:Panasonic Electronic Components 电容:470 pF 容差:10 % 电压额定值:250 VAC 工作温度范围:- 25 C to + 125 C 端接类型:SMD/SMT 外壳代码 - in: 外壳代码 - mm: |
| MA28151KBB | 功能描述:专用陶瓷电容器 HF CHIP RoHS:否 制造商:Panasonic Electronic Components 电容:470 pF 容差:10 % 电压额定值:250 VAC 工作温度范围:- 25 C to + 125 C 端接类型:SMD/SMT 外壳代码 - in: 外壳代码 - mm: |
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