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参数资料
| 型号： | MAPLST1900-030CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 2/5页 |
| 文件大小： | 235K |
| 代理商： | MAPLST1900-030CF |
RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0)
IDSS
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS (1)
FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)
Characteristic
Symbol
Min
Typ
Max
Unit
DC CHARACTERISTICS @ 25C
Drain-Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 Adc)
V(BR)DSS
65
—
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0)
IDSS
—
1
Adc
Gate—Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
IGSS
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 1 mA)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mA)
VDS(Q)
2
—
4.5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 1 A)
VDS(on)
—
0.2
—
Vdc
Forward Transconductance
(VGS = 10 Vdc, ID = 1 A)
Gm
—
1.2
—
S
DYNAMIC CHARACTERISTICS @ 25C
Input Capacitance (Including Input Matching Capacitor in Package)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
—
90
—
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
—
32.5
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
—
1.5
—
pF
RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture)
PHS Gain
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
Gps
—
13.0
—
dB
PHS Drain Efficiency
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
EFF ()
—
26
—
%
PHS ACPR @ 600 kHz offset
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1905 MHz)
ACPR
—
-68
—
dBc
PHS ACPR @ 900 kHz offset
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1905 MHz)
ACPR
—
-78
—
dBc
PHS Gain
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
Gps
—
13.0
—
dB
PHS Drain Efficiency
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
EFF ()
—
26
—
%
Input Return Loss
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1920 MHz)
IRL
—
-12
-9
dB
Output VSWR Tolerance
(VDS = 26 Vdc, Pi/4 DQPSK, 192 kHz, POUT = 8 W (avg.),
IDQ = 250 mA, f0 = 1890 MHz)
Ψ
No Degradation In Output Power
Before and After Test
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST1900-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V |
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
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