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参数资料
| 型号： | MAPLST1900-030CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 4/5页 |
| 文件大小： | 235K |
| 代理商： | MAPLST1900-030CF |
RF Power LDMOS Transistor, 1890 — 1925 MHz, 30W, 26V
MAPLST1900-030CF
10/31/03
Preliminary
4
Graph 1. PHS: Power Gain and Drain Efficiency vs. Output Power
Graph 2. PHS: Adjacent Channel Power Ratio vs. Output Power
4
10.75
11.00
11.25
11.50
11.75
12.00
12.25
12.50
12.75
13.00
13.25
13.50
30
31
32
33
34
35
36
37
38
39
40
41
42
43
POUT(dBm) avg.
Gain
(dB)
0
5
10
15
20
25
30
35
40
Efficiency
(%
)
Gain (1899MHz)
Gain (1905MHz)
Eff (1899MHz)
Eff (1905MHz)
f
ACPR (600kHz Offset) @ 1905MHz
Pi/4 DQPSK,192 kHz, 26VDC, 250mA
-80
-75
-70
-65
-60
-55
30
31
32
33
34
35
36
37
38
39
40
41
42
43
POUT(dBm) avg.
Ga
in(dB
)
ACPR Lower (1905MHz)
ACPR Upper (1905MHz)
相关PDF资料 |
PDF描述 |
|---|---|
| MAPLST1900-060CF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST1920-030WF | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPRST0912-50 | L BAND, Si, NPN, RF POWER TRANSISTOR |
| MAT-01GH/883 | 25 mA, 45 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| MAT03-903H | SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST1900-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 60 W , 1890-1925 MHz, 26V |
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
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