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参数资料
| 型号： | MAPLST1920-090CF |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 文件页数： | 1/4页 |
| 文件大小： | 207K |
| 代理商： | MAPLST1920-090CF |
RF Power Field Effect Transistor
LDMOS, 1930 — 1990 MHz, 90W, 26V
Designed for base station applications in the
1930-1990 MHz frequency range. This product
can be used for TDMA, CDMA, or EDGE/
GSM applications.
Typical EDGE performance @ 1990MHz,
26V, Idq=900mA:
Output Power: 45W
Power Gain: 14dB (typ.)
Efficiency: 40% (typ.)
MAPLST1920-090CF
Package Style
10/31/03
Preliminary
Maximum Ratings
Parameter
Symbol
Rating
Units
Drain—Source Voltage
VDSS
65
Vdc
Gate—Source Voltage
VGS
+20, -20
Vdc
Total Power Dissipation @ TC = 25 °C
PD
175
W
Storage Temperature
TSTG
-40 to +150
°C
Junction Temperature
TJ
+200
°C
Characteristic
Symbol
Thermal Resistance, Junction to Case
RΘJC
Max
1.0
Unit
C/W
Thermal Characteristics
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
MAPLST1920-090CF
Features
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| MAPLST2122-002PP | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
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| MAPLST2122-030WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-060WF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| MAPLST2122-030CF | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MAPLST2122-015CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V |
| MAPLST2122-030CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V |
| MAPLST2122-060CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V |
| MAPLST2122-090CF | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 90W, 28V |
| MAPM-020512-010C00 | 功能描述:射频MOSFET电源晶体管 20-512MHz Gain:25dB VSWR:3:1 -40c to 85C RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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