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参数资料
| 型号： | MAX11014BGTM+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 14/70页 |
| 文件大小： | 0K |
| 描述： | IC RF MESFET AMP 48-TQFN-EP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | RF MESFET 放大器漏极电流控制器 |
| RF 型： | 手机 |
| 次要属性： | 12 位 DAC 控制器 MESFET 栅极电压 |
| 封装/外壳： | 48-WFQFN 裸露焊盘 |
| 包装： | 带卷 (TR) |
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Automatic RF MESFET Amplifier
Drain-Current Controllers
Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
11, 27
12, 26
13
14
15
16, 28, 29,
34–37
17
18
19
20
21
22
23
24
25
NAME
DIN/SDA
DOUT/A1
ADCIN1
ADCIN2
DXN1
DXP1
DXN2
DXP2
REFDAC
REFADC
AV DD
AGND
ACLAMP2
GATE2
GATEV SS
N.C.
ACLAMP1
GATE1
FILT1
FILT2
FILT3
FILT4
PGAOUT1
PGAOUT2
AV SS
FUNCTION
Serial Data Input. Data is latched into the serial interface on the rising edge of SCLK in SPI mode.
Connect a pullup resistor to SDA in I 2 C mode.
Serial Data Output in SPI Mode/Address Select 1 in I 2 C Mode. Data transitions on the falling edge of
SCLK. DOUT is high impedance when CS is high. Connect A1 to DV DD or DGND to set the device
address to I 2 C mode.
Analog Input 1
Analog Input 2
Remote-Diode Current Sink. Connect the emitter of a base-emitter junction remote npn transistor to
DXN1.
Remote-Diode Current Source. Connect DXP1 to the base/collector of a remote temperature-sensing
npn transistor. Do not leave DXP1 open ; connect to DXN1 if no remote diode is used.
Remote-Diode Current Sink. Connect the emitter of a base-emitter junction remote npn transistor to
DXN2.
Remote-Diode Current Source. Connect DXP2 to the base/collector of a remote temperature-sensing
npn transistor. Do not leave DXP2 open ; connect to DXN2 if no remote diode is used.
DAC Reference Input/Output. Connect a 0.1μF capacitor to AGND in external reference mode. See
the HCFG (Read/Write) section.
ADC Reference Input/Output. Connect a 0.1μF capacitor to AGND in external reference mode. See
the HCFG (Read/Write) section.
Positive Analog Supply Voltage. Set AV DD between +4.75V and +5.25V. Bypass with a 1μF and a
0.1μF capacitor in parallel to AGND.
Analog Ground
MESFET2 External Clamping Voltage Input
MESFET2 Gate Connection. See the Gate-Drive Amplifiers section.
Gate-Drive Amplifier Negative Power-Supply Input. Set GATEV SS between -4.75V and -5.5V. Connect
externally to AV SS . Bypass with a 1μF and a 0.1μF capacitor in parallel to AGND.
No Connection. Not internally connected.
MESFET1 External Clamping Voltage Input
MESFET1 Gate Connection. See the Gate-Drive Amplifiers section.
Channel 1 Filter 1 Input. See Figures 5 and 6.
Channel 1 Filter 2 Input. See Figures 5 and 6.
Channel 2 Filter 3 Input. See Figures 5 and 6.
Channel 2 Filter 4 Input. See Figures 5 and 6.
Channel 1 Amplifier Voltage Output. See the PGAOUT Outputs section and Figures 5 and 6.
Channel 2 Amplifier Voltage Output. See the PGAOUT Outputs section and Figures 5 and 6.
Negative Analog Supply Voltage. Set AV SS between -4.75V and -5.5V. Connect externally to
GATEV SS . Bypass with a 1μF and a 0.1μF capacitor in parallel to AGND.
14
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相关代理商/技术参数 |
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| MAX11014EVKIT+ | 制造商:Maxim Integrated Products 功能描述:EVALUATION KIT FOR THE MAX11014 - Bulk |
| MAX11015 | 功能描述:射频放大器 RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| MAX11015BGTM | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Automatic RF MESFET Amplifier Drain-Current Controllers |
| MAX11015BGTM+ | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Automatic RF MESFET Amplifier Drain-Current Controllers |
| MAX11017 | 功能描述:模数转换器 - ADC RoHS:否 制造商:Texas Instruments 通道数量:2 结构:Sigma-Delta 转换速率:125 SPs to 8 KSPs 分辨率:24 bit 输入类型:Differential 信噪比:107 dB 接口类型:SPI 工作电源电压:1.7 V to 3.6 V, 2.7 V to 5.25 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-32 |
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