参数资料
型号: MAX11014BGTM+T
厂商: Maxim Integrated
文件页数: 2/70页
文件大小: 0K
描述: IC RF MESFET AMP 48-TQFN-EP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
功能: RF MESFET 放大器漏极电流控制器
RF 型: 手机
次要属性: 12 位 DAC 控制器 MESFET 栅极电压
封装/外壳: 48-WFQFN 裸露焊盘
包装: 带卷 (TR)
Automatic RF MESFET Amplifier
Drain-Current Controllers
ABSOLUTE MAXIMUM RATINGS
AV DD to AGND .........................................................-0.3V to +6V
DV DD to DGND.........................................................-0.3V to +6V
AGND to DGND.....................................................-0.3V to +0.3V
AV SS to AGND ...........................................................-0.3V to -6V
RCS1+, RCS1-, RCS2+, RCS2- to GATEV SS
(MAX11014) ........................................................-0.3V to +13V
RCS1+, RCS1-, RCS2+, RCS2- to AGND
(MAX11015) ........................................................-0.3V to +34V
RCS1- to RCS1+.......................................................-6V to +0.3V
RCS2- to RCS2+.......................................................-6V to +0.3V
GATEV SS to AGND...................................................+0.3V to -6V
GATE1, GATE2 to AGND .....(GATEV SS - 0.3V) to (AV DD + 0.3V)
DV DD to AV DD ..........................................-0.3V to (AV DD + 0.3V)
PGAOUT1, PGAOUT2 to AGND ..............-0.3V to (AV DD + 0.3V)
SCLK/SCL, DIN/SDA, CS /A0, N.C./A2, CNVST , OPSAFE1,
OPSAFE2 to DGND.............................-0.3V to (DV DD + 0.3V)
DOUT/A1, SPI/ I2C , ALARM, BUSY
to DGND ..............................................-0.3V to (DV DD + 0.3V)
Maximum Current into Any Pin............................................50mA
Continuous Power Dissipation (T A = +70°C)
48-Pin Thin QFN (derate 27.0mW/°C
above +70°C)..........................................................2162.2mW
Operating Temperature Range .........................-40°C to +105°C
Storage Temperature Range ...............................-60°C to 150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
All Other Analog Inputs to AGND ............-0.3V to (AV DD + 0.3V)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V GATEVSS = V AVSS = -5.5V to -4.75V, V AVDD = +4.75V to +5.25V, V DVDD = +2.7V to V AVDD , external V REFADC = +2.5V, external
V REFDAC = +2.5V, C REFADC = C REFDAC = 0.1μF, V OPSAFE1 = V OPSAFE2 = 0, V RCS1+ = V RCS2+ = +5V, C FILT1 = C FILT3 = 1nF, C FILT2 =
C FILT4 = 1nF, V AGND = V DGND = 0, V ADCIN0 = V ADCIN1 = 0, V ACLAMP1 = V ACLAMP2 = -5V, T J = T MIN to T MAX , unless otherwise noted.
All typical values are at T J = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
CURRENT-SENSE AMPLIFIER (Note 1)
Common-Mode Input Voltage
Range
Common-Mode Rejection Ratio
Input-Bias Current
Full-Scale Sense Voltage
V RCS_+
CMRR
I RCS+
I RCS-
V SENSE
MAX11014
MAX11015
0.5V < V RCS_+ < 11V for the MAX11014
5V < V RCS_+ < 32V for the MAX11015
V SENSE < 100mV over the common-mode
range
V SENSE = V RCS_+ - V RCS_-
0.5
5
90
90
11.0
32
200
±2
625
V
dB
μA
mV
To within ±0.5% accuracy
75
625
Sense Voltage Range
Total Current Set Error
To within ±2% accuracy
To within ±20% accuracy
V SENSE = 75mV
20
2
±0.1
625
625
±0.5
mV
%
Current-Sense Settling Time
Saturation Recovery Time
t HSCS
Settles to within ±0.5% of final value
Settles to within ±0.5% accuracy, from
V SENSE = 1.875V
< 25
< 45
μs
μs
CLASS AB INPUT CHANNEL
Untrimmed Offset
Offset Temperature Coefficient
Gain
Gain Error
19
0
4
0.1
Bits
Bits/ o C
%
2
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