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参数资料
| 型号： | MAX17082GTL+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 44/48页 |
| 文件大小： | 0K |
| 描述： | IC CTLR PWM DUAL IMVP-6.5 40TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | Quick-PWM™ |
| 应用： | 控制器， Intel IMVP-6+，IMVP-6.5? |
| 输入电压： | 4.5 V ~ 5.5 V |
| 输出数： | 1 |
| 输出电压： | 0.013 V ~ 1.5 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 40-WFQFN 裸露焊盘 |
| 供应商设备封装： | 40-TQFN-EP（5x5） |
| 包装： | 带卷 (TR) |
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Dual-Phase, Quick-PWM Controllers for
IMVP-6+/IMVP-6.5 CPU Core Power Supplies
PD ( N H Switching ) = ?
? ? I
η TOTAL
?
? ? GATE ?
C V f
? V OUT ? ? ? I LOAD ? 2
? V IN ( MAX ) ? ? ? ? η TOTAL ?
? ?
? ? I
?
? V
PD ( N H Re sistive ) = ? OUT ? ? LOAD ? R DS ( ON )
For most applications, nontantalum chemistries (ceram-
ic, aluminum, or OS-CON) are preferred due to their
resistance to inrush surge currents typical of systems
with a mechanical switch or connector in series with the
input. If the Quick-PWM controller is operated as the
second stage of a two-stage power-conversion system,
tantalum input capacitors are acceptable. In either con-
figuration, choose an input capacitor that exhibits less
than +10°C temperature rise at the RMS input current
for optimal circuit longevity.
Power-MOSFET Selection
Most of the following MOSFET guidelines focus on the
challenge of obtaining high load-current capability
when using high-voltage (> 20V) AC adapters. Low-
current applications usually require less attention.
The high-side MOSFET (N H ) must be able to dissipate
the resistive losses plus the switching losses at both
V IN(MIN) and V IN(MAX) . Calculate both these sums.
Ideally, the losses at V IN(MIN) should be approximately
equal to losses at V IN(MAX) , with lower losses in
between. If the losses at V IN(MIN) are significantly high-
er than the losses at V IN(MAX) , consider increasing the
size of N H (reducing R DS(ON) but with higher C GATE ).
Conversely, if the losses at V IN(MAX) are significantly
higher than the losses at V IN(MIN) , consider reducing
the size of N H (increasing R DS(ON) to lower C GATE ). If
V IN does not vary over a wide range, the minimum
power dissipation occurs where the resistive losses
equal the switching losses.
Choose a low-side MOSFET that has the lowest possible
on-resistance (R DS(ON) ), comes in a moderate-sized
package (i.e., one or two 8-pin SOs, DPAK, or D 2 PAK),
and is reasonably priced. Make sure that the DL_ gate
driver can supply sufficient current to support the gate
charge and the current injected into the parasitic gate-
to-drain capacitor caused by the high-side MOSFET
turning on; otherwise, cross-conduction problems might
occur (see the MOSFET Gate Drivers section).
MOSFET Power Dissipation
Worst-case conduction losses occur at the duty factor
extremes. For the high-side MOSFET (N H ), the worst-
case power dissipation due to resistance occurs at the
minimum input voltage:
2
? V IN ? ? η TOTA L ?
where η TOTAL is the total number of phases.
Generally, a small high-side MOSFET is desired to
reduce switching losses at high input voltages.
However, the R DS(ON) required to stay within package
power dissipation often limits how small the MOSFET
can be. Again, the optimum occurs when the switching
losses equal the conduction (R DS(ON) ) losses. High-
side switching losses do not usually become an issue
until the input is greater than approximately 15V.
Calculating the power dissipation in high-side MOSFET
(N H ) due to switching losses is difficult since it must
allow for difficult quantifying factors that influence the
turn-on and turn-off times. These factors include the
internal gate resistance, gate charge, threshold volt-
age, source inductance, and PCB layout characteris-
tics. The following switching-loss calculation provides
only a very rough estimate and is no substitute for
breadboard evaluation, preferably including verification
using a thermocouple mounted on N H :
? V IN ( MAX ) I LOAD f SW ? ? Q G ( SW ) ?
?
2
+ OSS IN SW
2
where C OSS is the N H MOSFET’s output capacitance,
Q G(SW) is the charge needed to turn on the N H
MOSFET, and I GATE is the peak gate-drive source/sink
current (2.2A typ).
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied due to the squared term in the C x
V IN 2 x ? SW switching-loss equation. If the high-side
MOSFET chosen for adequate R DS(ON) at low-battery
voltages becomes extraordinarily hot when biased from
V IN(MAX) , consider choosing another MOSFET with
lower parasitic capacitance.
For the low-side MOSFET (N L ), the worst-case power
dissipation always occurs at maximum input voltage:
?
PD ( N L Re sistive ) = ? 1- ? ? ? ? ? R DS ( ON )
The worst case for MOSFET power dissipation occurs
under heavy overloads that are greater than
I LOAD(MAX) but are not quite high enough to exceed
44
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| MAX17083ETG+ | 功能描述:直流/直流开关调节器 Low-Voltage Internal Switch Step-Down RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| MAX17083ETG+T | 功能描述:直流/直流开关调节器 Low-Voltage Internal Switch Step-Down RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
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| MAX17085BETL+ | 功能描述:电池管理 Dual Main Step-Down Controller RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
| MAX17085BETL+T | 功能描述:电池管理 Dual Main Step-Down Controller RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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