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参数资料
| 型号： | MAX1964TEEE+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 18/30页 |
| 文件大小： | 0K |
| 描述： | IC POWER CTRLR/SEQUENCER 16QSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 100 |
| 应用： | 电源控制器，序列发生器 |
| 输入电压： | 4.5 V ~ 28 V |
| 电流 - 电源： | 1.25mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-QSOP |
| 包装： | 管件 |
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Tracking/Sequencing Triple/Quintuple
Power-Supply Controllers
(
current-sense range. For a good compromise between
efficiency and cost, choose a high-side MOSFET (N H )
that has conduction losses equal to the switching loss-
es at the optimum input voltage. Check to ensure that
I GATE =
VL
2 R DS ( ON ) DH + R GATE
)
P NH ( CONDUCTION ) = I LOAD DS ( ON ) NH ? OUT ?
P NL = I LOAD R DS ( ON ) NL ? 1- ? OUT ? ?
R DS ( ON ) = VALLEY
the conduction losses at minimum input voltage don’t
exceed the package thermal limits or violate the overall
thermal budget. Check to ensure that the conduction
losses plus switching losses at the maximum input volt-
age don ’ t exceed package ratings or violate the overall
thermal budget.
The low-side MOSFET (N L ) provides the current-limit
signal, so choose a MOSFET with an R DS(ON) large
enough to provide adequate circuit protection (see the
Setting the Current-Limit section):
V
I VALLEY
Use the worst-case maximum value for R DS(ON) from
the MOSFET NL data sheet, and add some margin for
the rise in R DS(ON) over temperature. A good general
rule is to allow 0.5% additional resistance for each ° C of
the MOSFET junction temperature rise. Ensure that the
MAX1964/MAX1965 DL gate drivers can drive N L ; in
other words, check that the dv/dt caused by N H turning
on does not pull up the N L gate due to drain-to-gate
capacitance, causing cross-conduction problems.
where R DS(ON)DH is the high-side MOSFET driver ’ s on-
resistance (4 ? max), and R GATE is any resistance
placed between DH and the high-side MOSFET ’ s gate
(Figure 5).
2 ? V ?
R
? V IN ?
P NH ( TOTAL ) = P NH ( SWITCHING ) + P NH ( CONDUCTION )
2 ? ? V ? ?
? ? V IN ? ?
To reduce EMI caused by switching noise, add a 0.1μF
ceramic capacitor from the high-side switch drain to the
low-side switch source or add resistors (max 47 ? ) in
series with DL and DH to increase the switches ’ turn-on
and turn-off times (Figure 5).
The minimum load current should exceed the high-side
MOSFET ’ s maximum leakage current over temperature
if fault conditions are expected.
MOSFET package power dissipation often becomes a
dominant design factor. I 2 R power losses are the great-
est heat contributor for both high-side and low-side
MOSFETs. I 2 R losses are distributed between N H and
N L according to duty factor as shown in the equations
below. Generally, switching losses affect only the high-
side MOSFET, since the low-side MOSFET is a zero-
voltage switched device when used in the buck
topology.
MAX1964
MAX1965
TO VL
BST
DH
LX
DH
R GATE
(OPTIONAL)
C BST
R GATE
(OPTIONAL)
N H
N L
L
P NH ( SWITCHING ) = V IN LOAD OSC ? GS GD ?
?
Gate-charge losses are dissipated by the driver and do
not heat the MOSFET. Calculate the temperature rise
according to package thermal-resistance specifications
to ensure that both MOSFETs are within their maximum
junction temperature at high ambient temperature. The
worst-case dissipation for the high-side MOSFET (P NH )
occurs at both extremes of input voltage, and the worst-
case dissipation for the low-side MOSFET (P NL ) occurs
at maximum input voltage.
? Q + Q ?
I
? I GATE ?
I GATE is the average DH driver output current capability
determined by:
GND
Figure 5. Reducing the Switching EMI
Input Capacitor
The input filter capacitor reduces peak currents drawn
from the power source and reduces noise and voltage
ripple on the input caused by the circuit ’ s switching.
The input capacitor must meet the ripple current
requirement (I RMS ) imposed by the switching currents
defined by the following equation:
18
______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX1964TEEE+ | 功能描述:电流和电力监控器、调节器 Track/Seq Trpl/Wuint Power-Supply Ctlr RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1964TEEE+T | 功能描述:电流和电力监控器、调节器 Track/Seq Trpl/Wuint Power-Supply Ctlr RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1964TEEE-T | 功能描述:电流和电力监控器、调节器 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1965TEEP | 功能描述:电流和电力监控器、调节器 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
| MAX1965TEEP-T | 功能描述:电流和电力监控器、调节器 RoHS:否 制造商:STMicroelectronics 产品:Current Regulators 电源电压-最大:48 V 电源电压-最小:5.5 V 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:HPSO-8 封装:Reel |
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