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| 型号： | MAX6876ETX+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 13/39页 |
| 文件大小： | 0K |
| 描述： | IC TRACKER/SUPERVISOR MON 36TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 50 |
| 类型： | 序列发生器 |
| 监视电压数目： | 4 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 复位超时： | 可调节/可选择 |
| 电压 - 阀值： | 可调节/可选择 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
| 包装： | 管件 |
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EEPROM-Programmable, Quad,
Power-Supply Tracker/Sequencer Circuit
Pin Description (continued)
PIN
32
33
34
35
36
—
NAME
GATE2
IN2
OUT1
GATE1
IN1
EP
FUNCTION
Gate Drive for External n-Channel FETs. GATE2 begins enhancing the external n-channel FETs when
all monitored inputs are within their selected thresholds (0.5V to 5.5V), at least one IN_ input or V CC is
above the minimum operating voltage, V TRKEN > 1.285V threshold, and the ENABLE input is logic
high. During power-up mode, GATE_ voltages are enhanced with internal control loops forcing all
OUT_ voltages to track the reference ramp (SYNCH) at a programmed slew rate. An internal charge
pump boosts GATE2 to V IN2 + 5V to fully enhance the external n-channel FET when power-up is
complete.
Supply Voltage and Tracked Input Voltage. Nominal supply range is 0.5V to 5V. IN1, IN2, IN3, IN4, or
V CC must be greater than the internal UVLO (V ABP = 2.7V) to enable the tracking functionality. IN2 is
monitored with internally selected thresholds to ensure all supplies have stabilized before tracking (or
sequencing) is enabled.
Monitored Output Voltage. Each OUT1 is monitored to control the supply slew rate and tracking
performance. OUT1 – OUT4 begin to track up after the internal supply (ABP) exceeds the minimum
voltage requirements, V TRKEN > 1.285V threshold, ENABLE is logic high, and IN1 – IN4 are all within
their selected thresholds. The OUT1 output falls out of the tracking equation as OUT1 approaches
IN1; other OUT_ supplies continue tracking up without signaling a system fault. OUT_ outputs are
tracked down during power-off conditions.
Gate Drive for External n-Channel FETs. GATE1 begins enhancing the external n-channel FETs when
all monitored inputs are within their selected thresholds (0.5V to 5.5V), at least one IN_ input or V CC is
above the minimum operating voltage, V TRKEN > 1.285V threshold, and the ENABLE input is logic
high. During power-up mode, GATE_ voltages are enhanced with internal control loops forcing all
OUT_ voltages to track the reference ramp (SYNCH) at a programmed slew rate. An internal charge
pump boosts GATE1 to V IN1 + 5V to fully enhance the external n-channel FET when power-up is
complete.
Supply Voltage and Tracked Input Voltage. Nominal supply range is 0.5V to 5V. IN1, IN2, IN3, IN4, or
V CC must be greater than the internal UVLO (V ABP = 2.7V) to enable the tracking functionality. IN1 is
monitored with internally selected thresholds to ensure all supplies have stabilized before tracking (or
sequencing) is enabled.
Exposed Paddle. Exposed paddle is internally connected to GND.
Detailed Description
The MAX6876 EEPROM-configurable, multivoltage
power tracker/supervisor monitors four system voltages
and ensures proper power-up and power-down condi-
tions for systems requiring voltage tracking and/or
sequencing. The MAX6876 provides a highly config-
urable solution as key thresholds and timing parame-
ters are programmed through an I 2 C interface and
these values are stored in internal EEPROM. In addition
to tracking and sequencing voltages, the MAX6876
also provides supervisory functions as well as an over-
current detection circuit.
The MAX6876 features programmable undervoltage
and overvoltage thresholds for each input supply. The
thresholds are EEPROM configured in 10mV (0.5V to
3.05V) or 20mV (1.0V to 5.5V) increments. When all of
the voltages are within their specifications, the device
turns on the external n-channel MOSFETs to either
sequence or track the voltages to the system. All of the
voltages can be sequenced or tracked or powered up
with a combination of the two options. During voltage
tracking, the voltage at the GATE of each MOSFET is
increased to slowly turn on each OUT_. The GATE
delay is EEPROM-selectable from 25μs to 1.6s. The
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX6876ETX+ | 功能描述:监控电路 EEPROM-Prog Quad Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6876ETX+T | 功能描述:监控电路 EEPROM-Prog Quad Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6876ETX-T | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6876EVCMOD2 | 功能描述:监控电路 Programmers, Development Systems RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6876EVKIT | 功能描述:监控电路 Programmers, Development Systems RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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