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参数资料
| 型号： | MAX6882ETE+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 10/19页 |
| 文件大小： | 0K |
| 描述： | IC SEQUENCE/SUPERVISOR 16TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 75 |
| 类型： | 序列发生器 |
| 监视电压数目： | 2 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 复位超时： | 可调节/可选择 |
| 电压 - 阀值： | 可调节/可选择 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WQFN 裸露焊盘 |
| 供应商设备封装： | 16-TQFN-EP（4x4） |
| 包装： | 管件 |
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
Pin Description (continued)
MAX6880
PIN
MAX6881 MAX6882
MAX6883
NAME
FUNCTION
14
—
10
—
PG/ RST
Power-Good Output, Open-Drain. PG_ RST asserts high t TIMEOUT
after all OUT_ voltages exceed the V TH_PG thresholds.
Channel 3 Monitored Output Voltage. Connect OUT3 to the source
16
9
—
—
OUT3
of an n-channel FET. A fault condition activates a 100 ? pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
17
10
—
—
GATE3
boosts GATE3 to V IN3 + 5V to fully enhance the external n-channel
FET when power-up is complete.
Channel 2 Monitored Output Voltage. Connect OUT2 to the source
18
11
11
11
OUT2
of an n-channel FET. A fault condition activates a 100 ? pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
19
12
12
12
GATE2
boosts GATE2 to V IN2 + 5V to fully enhance the external n-channel
FET when power-up is complete.
Channel 1 Monitored Output Voltage. Connect OUT1 to the source
20
13
13
13
OUT1
of an n-channel FET. A fault condition activates a 100 ? pulldown to
ground.
Gate Drive for External n-Channel FET. An internal charge pump
21
14
14
14
GATE1
boosts GATE1 to V IN1 + 5V to fully enhance the external n-channel
FET when power-up is complete.
22
15
—
—
IN3
Supply Input Voltage. IN1, IN2, or IN3 must be greater than the
internal undervoltage lockout (V ABP = 2.7V) to enable the
sequencing functionality. Each IN_ input is simultaneously
23
16
15
15
IN2
monitored by SET_ inputs to ensure all supplies have stabilized
before power-up is enabled. If IN_ is connected to ground or left
unconnected and SET_ is above 0.5V, then no sequencing control
24
1
16
16
IN1
is performed on that channel. Each IN_ is internally pulled down by
a 100k ? resistor.
EP
EP
EP
EP
EP
Exposed Paddle. Connect exposed paddle to ground.
10
______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX6882ETE+ | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6882ETE+T | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6882ETE-T | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6883ETE | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6883ETE+ | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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