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| 型号： | MAX6882ETE+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/19页 |
| 文件大小： | 0K |
| 描述： | IC SEQUENCE/SUPERVISOR 16TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 75 |
| 类型： | 序列发生器 |
| 监视电压数目： | 2 |
| 输出： | 开路漏极或开路集电极 |
| 复位： | 低有效 |
| 复位超时： | 可调节/可选择 |
| 电压 - 阀值： | 可调节/可选择 |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-WQFN 裸露焊盘 |
| 供应商设备封装： | 16-TQFN-EP（4x4） |
| 包装： | 管件 |
Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
ELECTRICAL CHARACTERISTICS (continued)
(IN1, IN2, or IN3 = +2.7V to +5.5V, EN/ UV = MARGIN = ABP, T A = -40°C to +85°C, unless otherwise specified. Typical values are
at T A = +25°C, unless otherwise noted.) (Note 1)
Power-Good Threshold
Power-Good Threshold Hysteresis
GATE_ Output High
GATE_ Pullup Current
GATE_ Pulldown Current
V TH_PG
V HYS_PG
V GOH
I GUP
I GD
I GDS
V OUT_ falling
V OUT_ rising
I SOURCE = 0.5μA
During power-up and power-down,
V GATE_ = 1V
During power-up and power-down,
V GATE_ = 5V
When disabled, V GATE_ = 5V, V IN_ ≥ 2.7V
When disabled, V GATE_ = 5V, V IN_ ≥ 4V
91.5
IN_ +
4.2
2.5
2.5
92.5
0.5
IN_ +
5.0
4
4
9.5
20
93.5
IN_ +
5.8
%
%
V
μA
μA
mA
SET_ to GATE_ Delay
PG/ RST Output Low
t D-GATE
V OL
SET falling, 25mV overdrive
V IN_ ≥ 2.7V, I SINK = 1mA, output asserted
V IN_ ≥ 4.0V, I SINK = 4mA, output asserted
10
0.3
0.4
μs
V
Tracking Differential Voltage Stop
Ramp
Tracking Differential Fault Voltage
Power-Low Threshold
Power-Low Hysteresis
V TRK
V TRK_F
V TH_PL
V TH_PLHYS
Differential between each of the OUT_ and
the ramp voltage during power-up and
power-down, Figure 1 (Note 5)
Differential between each of the OUT_ and
the ramp voltage, Figure 1 (Note 5)
OUT_ falling
OUT_ rising
75
200
125
125
250
142
10
180
310
170
mV
mV
mV
mV
OUT to GND Pulldown Impedance
IN_ > 2.7V (Note 6)
100
?
MARGIN Pullup Current
MARGIN Input Voltage
I IN
V IL
V IH
7
2.0
10
13
0.8
μA
V
MARGIN Glitch Rejection
100
ns
Note 1: Specifications guaranteed for the stated global conditions. 100% production tested at T A = +25°C and T A = +85°C.
Specifications at T A = -40°C to +85°C are guaranteed by design. These devices meet the parameters specified when at
least one of IN1/IN2/IN3 is between 2.7V to 5.5V, while the remaining IN1/IN2/IN3 are between 0 and 5.5V.
Note 2: A current I D = 2.5μA ±15% is generated internally and is used to set the DELAY and TIMEOUT periods and used as a refer-
ence for t DELAY and t TIMEOUT .
Note 3: The total DELAY is t DELAY = 200μs + (500k ? x C DELAY ). Leave DELAY unconnected for 200μs delay. The total TIMEOUT is
t TIMEOUT = 200μs + (500k ? x C TIMEOUT ). Leave TIMEOUT unconnected for 200μs timeout.
Note 4: A current I S = 25μA ±10% is generated internally and used as a reference for t FAULT , t RETRY , and slew rate.
Note 5: During power-up, only the condition OUT_ < ramp - V TRK is checked in order to stop the ramp. However, both conditions
OUT_ < ramp – V TRK_F and OUT_ > ramp + V TRK_F cause a fault. During power-down, only the condition OUT > ramp +
V TRK is checked in order to stop the ramp. However, both conditions OUT_ < ramp - V TRK_F and OUT_ > ramp + V TRK_F
cause a fault (see Figure 10). Therefore, if OUT1, OUT2, and OUT3 (during power-up tracking and power-down) differ by
more than 2 x V TRK_F , a fault condition is asserted.
Note 6: A 100 ? pulldown to GND activated by a fault condition. See the Internal Pulldown section.
_______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX6882ETE+ | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6882ETE+T | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6882ETE-T | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6883ETE | 功能描述:监控电路 RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| MAX6883ETE+ | 功能描述:监控电路 Dual Power-Sup Sequencer RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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