参数资料
型号: MAX8810AETM+
厂商: Maxim Integrated Products
文件页数: 2/50页
文件大小: 0K
描述: IC CNTRLR PWM W/MOSFET 48TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 50
应用: 控制器,Intel VR10、VR11
输入电压: 4.5 V ~ 5.5 V
输出数: 1
输出电压: 0.5 V ~ 1.6 V
工作温度: 0°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 48-WFQFN 裸露焊盘
供应商设备封装: 48-TQFN-EP(6x6)
包装: 管件
VRD11/VRD10, K8 Rev F 2/3/4-Phase PWM
Controllers with Integrated Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
REF, COMP, SS/OVP, OSC, NTC, VRTSET,
RS+, RS-, PWM_ to GND.......................-0.3V to (V CC + 0.3V)
CS_+, CS_-, VID_, BUF, EN, ILIM, SEL, VRREADY,
VRHOT, V CC to GND ............................................-0.3V to +6V
BST_ to PGND_ ......................................................-0.3V to +35V
LX_ to PGND_............................................................-1V to +28V
BST_ to VL_ ...............................................................-1V to +30V
DH_ to PGND_ .........................................-0.3V to (V BST_ + 0.3V)
DH_, BST_ to LX_ .....................................................-0.3V to +7V
VL_ to PGND_ ..........................................................-0.3V to +7V
DL_ to PGND_ ..........................................-0.3V to (V VL_ + 0.3V)
PGND_ to GND......................................................-0.3V to +0.3V
CS_+ to CS_-.........................................................-0.3V to +0.3V
DH_, DL_ Current ....................................................±200mA RMS
VL_ to BST_ Diode Current...........................................50mA RMS
Continuous Power Dissipation (T A = +70 ° C)
40-Pin Thin QFN 5mm x 5mm
(derate 35.7mW/ ° C above +70 ° C) ..........................2857.1mW
48-Pin Thin QFN 6mm x 6mm
(derate 37mW/ ° C above +70 ° C) ................................2963mW
Operating Temperature Range ...........................-40 ° C to +85 ° C
Junction Temperature ......................................................+150 ° C
Storage Temperature Range .............................-65 ° C to +150 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V VL_ = V BST_ = 6.5V, V CC = V EN = 5V, V ILIM = 1.5V, VID_ = SEL = REF = BUF = unconnected, V COMP = V RS+ = 1.0V, R VRREADY =
5k Ω pullup to 5V, R SS/OVP = 12k Ω to GND, R NTC = 10k Ω to GND, f SW = 300kHz, R VRTSET = 118k Ω to GND, V CS_+ = V CS_- = 1V,
PWM_ = unconnected, R VRHOT = 249 Ω pullup to 1.05V, V GND = V PGND_ = V LX_ = V RS- = 0V, DL_ = DH_ = unconnected, T A = 0 ° C
to +85 ° C . Typical values are at T A = +25 ° C, unless otherwise noted.)
PARAMETER
V CC Operating Range
V CC UVLO Trip Level
V CC Shutdown Supply Current
V CC Standby Supply Current
V CC Operating Supply Current
Thermal Shutdown
CONDITIONS
Rising
Falling
V CC < 3.75V
V EN = 0V
V RS+ - V RS- = 1.0V, no switching, V DAC = 1.0V (Note 1)
Temperature rising, hysteresis = 25 ° C (typ)
MIN
4.5
4.0
3.7
TYP
4.25
4.0
0.35
0.5
13
+160
MAX
5.5
4.5
4.3
UNITS
V
V
mA
mA
mA
° C
INTERNAL REFERENCE (REF)
Output Voltage
Output Regulation (Sourcing)
Output Regulation (Sinking)
Reference UVLO Trip Level
I REF = -100μA
V CC = 4.5V at I REF = -500μA to V CC = 5.5V at
I REF = -100μA
V CC = 4.5V at I REF = +100μA to V CC = 5.5V at
I REF = +500μA
Rising (100mV typ hysteresis)
1.992
-0.05
-0.2
2.000
1.84
2.008
+0.05
+0.2
V
%
%
V
BUF REFERENCE
BUF Regulation Voltage
BUF Output Regulation
I BUF = 0A
V CC = 4.5V at I BUF = +100μA to V CC = 5.5V at
I BUF = +500μA
0.99
-0.25
1.0
1.01
+0.25
V
%
SOFT-START
EN Startup Delay (TD1)
Soft-Start Period Range (TD2)
Soft-Start Tolerance
Intel Boot-Level Duration (TD3)
From EN rising to V OUT rising
12k Ω < R SS/OVP < 90.9k Ω
R SS/OVP = 56k Ω
SEL = GND or SEL = V CC
1.6
0.5
2.25
175
2.2
3.00
250
2.8
6.5
3.75
350
ms
ms
ms
μs
2
_______________________________________________________________________________________
相关PDF资料
PDF描述
A8287SLBTR-T IC LNB SUPPLY/VOLTAGE REG 24SOIC
1782-15J COIL RF .62UH MOLDED UNSHIELDED
VI-J6X-CX CONVERTER MOD DC/DC 5.2V 75W
MAX8739ETP+ IC DC/DC CONV W/OPAMP 20TQFN-EP
UPS0J681MPD CAP ALUM 680UF 6.3V 20% RADIAL
相关代理商/技术参数
参数描述
MAX8810AETM+ 功能描述:电流型 PWM 控制器 VRD11/10 K8 Rev. F 2/3/4-Phase PWM Ctlr RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14
MAX8810AETM+T 功能描述:电流型 PWM 控制器 VRD11/10 K8 Rev. F 2/3/4-Phase PWM Ctlr RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14
MAX8811EEE+ 功能描述:功率驱动器IC High-Speed Dual Phase Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX8811EEE+T 功能描述:功率驱动器IC High-Speed Dual Phase Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
MAX8814ETA+ 制造商:Maxim Integrated Products 功能描述:CHGR LI-ION/LI-POL 570MA 4.2V 8TDFN EP - Rail/Tube 制造商:Rochester Electronics LLC 功能描述: