参数资料
型号: MB85R1002ANC-GE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 11/16页
文件大小: 0K
描述: IC FRAM 1MBIT 150NS 48TSOP
特色产品: Graphics Display Controllers (GDC)
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 1M (64K x 16)
速度: 150ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFSOP(0.488",12.40mm 宽)
供应商设备封装: 48-TSOP
包装: 托盘
其它名称: 865-1169
MB85R1002A
■ POWER ON/OFF SEQUENCE
V CC
CE2
3.0 V
V IH (Min)
1.0 V
V IL (Max)
t PD
t R
t PU
V CC
CE2
3.0 V
V IH (Min)
1.0 V
V IL (Max)
0V
CE2 ≤ 0.2 V
0V
CE1
CE1 > V CC × 0.8 *
CE1 : Don't Care
CE1 > V CC × 0.8 *
CE1
* : CE1 (Max) < V CC + 0.5 V
Notes: ? Use either of CE1 or CE2, or both for disable control of the device.
? Because turning the power on from an intermediate level may cause malfunctions,
when the power is turned on, V CC is required to be started from 0 V.
? If the device does not operate within the specified conditions of read cycle, write cycle,
power on/off sequence, memory data can not be guaranteed.
? When turning the power on or off, it is recommended that CE2 is connected to ground
to prevent unexpected writing.
(within recommended operating conditions)
Parameter
CE1 LEVEL hold time for Power OFF
CE1 LEVEL hold time for Power ON
Power supply rising time
Symbol
t PD
t PU
t R
Min
85
85
0.05
Value
Typ
?
?
?
Max
?
?
200
Unit
ns
ns
ms
■ NOTES ON USE
After the IR reflow completed, it is not guaranteed to hold the data written prior to the IR reflow.
DS501-00004-1v0-E
11
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