参数资料
型号: MB85RC128PNF-G-JNE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 1/20页
文件大小: 0K
描述: IC FRAM 128KBIT 400KHZ 8SOP
特色产品: FRAM (Ferroelectric RAM)
标准包装: 1,500
格式 - 存储器: RAM
存储器类型: FRAM(Ferroelectric RAM)
存储容量: 128K (16K x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 托盘
其它名称: 865-1172
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05–13110–3E
Memory FRAM
128 K (16 K × 8) Bit I 2 C
MB85RC128
■ DESCRIPTION
The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration
of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for
forming the nonvolatile memory cells.
The MB85RC128 adopts the two-wire serial interface.
Unlike SRAM, the MB85RC128 is able to retain data without using a data backup battery.
The read/write endurance of the nonvolatile memory cells used for the MB85RC128 has improved to be at
least 10 10 cycles, significantly out performing Flash memory and E 2 PROM in the number.
The MB85RC128 does not need a polling sequence after writing to the memory such as the case of Flash
memory nor E 2 PROM.
■ FEATURES
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Bit configuration : 16,384 words × 8 bits
Operating power supply voltage : 2.7 V to 3.6 V
Operating frequency : 400 kHz (Max)
Two-wire serial interface : I 2 C-bus specification ver. 2.1 compliant, supports Standard-mode/
Fast-mode.
Fully controllable by two ports: serial clock (SCL) and serial data (SDA).
Operating temperature range : ? 40 ° C to +85 ° C
Data retention : 10 years ( + 75 ° C)
Read/write endurance : 10 10 times
Package : Plastic / SOP, 8-pin (FPT-8P-M02)
Low power consumption : Operating current 0.15 mA (Max: @400 kHz), Standby current 5 μ A (Typ)
Copyright?2010-2011 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2011.6
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