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参数资料
| 型号： | MB85RC128PNF-G-JNE1 |
| 厂商： | Fujitsu Semiconductor America Inc |
| 文件页数： | 7/20页 |
| 文件大小： | 0K |
| 描述： | IC FRAM 128KBIT 400KHZ 8SOP |
| 特色产品： | FRAM (Ferroelectric RAM) |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | FRAM（Ferroelectric RAM） |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 托盘 |
| 其它名称： | 865-1172 |
MB85RC128
■ DATA STRUCTURE
In the I 2 C bus, the acknowledge “L” is output on the 9th bit after the 8 bits of the device and address word
following the start condition. After confirming the acknowledge response at the slave, the I 2 C master outputs
8bits × 2 memory address to the I 2 C slave. When the memory address input ends, the slave again outputs
the acknowledge “L”. After this operation, the I/O data follows in units of 8 bits, with the acknowledge “L”
output after every 8bits.
It is determined by the R/W code whether the data line is driven by the master or the slave. For a write
operation the slave will accept 8bits from the master then send an acknowledge. If the master detects the
acknowledge, the master will transfer the next 8bits. For a read operation the slave will place 8bits on the
I 2 C bus, then wait for an acknowledge from the master.
? Data Structure Diagram
Start
1
2
3
4
5
6
7
8
9
1
2
SCL
SDA
ACK
..
S
1
0
1
0
A2
A1
A0
R/ W
A
..
Access from master
Access from slave
S Start Condition
A ACK
■ FRAM ACKNOWLEDGE -- POLLING NOT REQUIRED
The MB85RC128 performs write operations at the same speed as read operations, so any waiting time for
an ACK polling* does not occur. The write cycle takes no additional time.
*: As to E 2 PROM, the Acknowledge Polling is performed as a progress check in the write programming step.
It places NAK condition on the bus as of “not acknowledged” during the writing programming period. The
busy status for the write programming is given from 9th ACK bit. That “done” condition is placed onto I 2 C
bus by E 2 PROM I 2 C device and your program had to poll the bus in order to sense that condition.
■ WRITE PROTECT (WP)
The entire memory array can be write protected using the Write Protect pin. When the Write Protect is set
to “H”, the entire memory map will be write protected. When the write protect pin is “L”, all addresses may
be overwritten.
Note : The Write Protect pin is pulled down internally to VSS pin, therefore if the Write Protect pin is open, the
pin status is detected as Low (write enabled).
DS05–13110–3E
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85RC128PNF-G-JNERE1 | 制造商:FUJITSU 功能描述:128K(16K8) bit,I2C,Memory FRAM |
| MB85RC16 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM 16 K (2 K x 8) Bit I2C |
| MB85RC16PNF-G-JNE1 | 功能描述:IC FRAM 16KBIT 1MHZ 8SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| MB85RC16PNF-G-JNERE1 | 制造商:FUJITSU 功能描述:16K(2K8) bit,I2C,Memory FRAM |
| MB85RC16PN-G-AMERE1 | 功能描述:IC FRAM 16KBIT 1MHZ 8SON 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:停产 格式 - 存储器:RAM 存储器类型:FRAM（Ferroelectric RAM） 存储容量:16K（2K x 8） 速度:1MHz 接口:I2C，2 线串口 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-WFDFN 裸露焊盘 供应商器件封装:8-SON 标准包装:1 |
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