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| 型号： | MB85RC128PNF-G-JNE1 |
| 厂商： | Fujitsu Semiconductor America Inc |
| 文件页数： | 11/20页 |
| 文件大小： | 0K |
| 描述： | IC FRAM 128KBIT 400KHZ 8SOP |
| 特色产品： | FRAM (Ferroelectric RAM) |
| 标准包装： | 1,500 |
| 格式 - 存储器： | RAM |
| 存储器类型： | FRAM（Ferroelectric RAM） |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 托盘 |
| 其它名称： | 865-1172 |
MB85RC128
■ ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Rating
Max
Unit
Power supply voltage*
Input pin voltage*
Output pin voltage*
Ambient temperature
Storage temperature
V CC
V IN
V OUT
T A
Tstg
? 0.5
? 0.5
? 0.5
? 40
? 40
+4.0
V CC + 0.5 ( ≤ 4.0)
V CC + 0.5 ( ≤ 4.0)
+ 85
+ 125
V
V
V
° C
° C
* : These parameters are based on the condition that VSS is 0 V.
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,
temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
■ RECOMMENDED OPERATING CONDITIONS
Parameter
Power supply voltage*
“H” level input voltage*
“L” level input voltage*
Ambient temperature
Symbol
V CC
V IH
V IL
T A
Min
2.7
V CC × 0.8
? 0.5
? 40
Value
Typ
3.3
?
?
?
Max
3.6
V CC + 0.5
( ≤ 4.0)
+ 0.6
+ 85
Unit
V
V
V
° C
* : These parameters are based on the condition that VSS is 0 V.
WARNING: The recommended operating conditions are required in order to ensure the normal operation of
the semiconductor device. All of the device's electrical characteristics are warranted when the
device is operated within these ranges.
Always use semiconductor devices within their recommended operating condition ranges.
Operation outside these ranges may adversely affect reliability and could result in device failure.
No warranty is made with respect to uses, operating conditions, or combinations not represented
on the data sheet. Users considering application outside the listed conditions are advised to contact
their representatives beforehand.
DS05–13110–3E
11
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PDF描述 |
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| MB85RC16PNF-G-JNE1 | IC FRAM 16KBIT 1MHZ 8SOP |
| MB85RC16VPNF-G-JNE1 | IC FRAM 16KBIT 400KHZ 8SOP |
| MB85RC64PNF-G-JNE1 | IC FRAM 64KBIT 400KHZ 8SOP |
| MB85RS128APNF-G-JNE1 | IC FRAM 128KBIT 25MHZ 8SOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85RC128PNF-G-JNERE1 | 制造商:FUJITSU 功能描述:128K(16K8) bit,I2C,Memory FRAM |
| MB85RC16 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM 16 K (2 K x 8) Bit I2C |
| MB85RC16PNF-G-JNE1 | 功能描述:IC FRAM 16KBIT 1MHZ 8SOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,500 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（单线） 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-TSSOP，8-MSOP（0.118"，3.00mm 宽） 供应商设备封装:8-MSOP 包装:带卷 (TR) |
| MB85RC16PNF-G-JNERE1 | 制造商:FUJITSU 功能描述:16K(2K8) bit,I2C,Memory FRAM |
| MB85RC16PN-G-AMERE1 | 功能描述:IC FRAM 16KBIT 1MHZ 8SON 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:停产 格式 - 存储器:RAM 存储器类型:FRAM（Ferroelectric RAM） 存储容量:16K（2K x 8） 速度:1MHz 接口:I2C，2 线串口 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 封装/外壳:8-WFDFN 裸露焊盘 供应商器件封装:8-SON 标准包装:1 |
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