参数资料
型号: MB86R01PB-GSE1
厂商: Fujitsu Semiconductor America Inc
文件页数: 41/89页
文件大小: 0K
描述: IC SOC GRAPHIC CONTRLR 484BGA
特色产品: Graphics Display Controllers (GDC)
标准包装: 40
系列:
应用: 图形控制器
核心处理器: ARM9
程序存储器类型: 外部程序存储器
控制器系列:
RAM 容量: 64K x 8
接口: ADC,ATA,CAN,EBI/EMI,I²C,I²S,媒体 LB,PWM,SD 卡,UART/USART,USB
输入/输出数: 24
电源电压: 1.1 V ~ 3.6 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 484-BGA
包装: 托盘
供应商设备封装: 484-BGA(23x23)
其它名称: 865-1110
40
FUJITSU MICROELECTRONICS
PROPRIETARY AND CONFIDENTIAL
MB86R01 DATA SHEET
8.4.
DC Characteristics
8.4.1.
3.3V Standard CMOS I/O
Table 8-7 shows 3.3V standard CMOS I/O DC characteristics.
Table 8-7
Standard CMOS I/O DC Characteristics
Measurement condition: VDDE = 3.3
±0.3V, VSS = 0V, TJ = -40 to 125°C
Rating
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
H level input voltage
VIH
2.0
VDDE + 0.3
V
L level input voltage
VIL
-0.3
0.8
V
H level output
voltage
VOH IOH = -100
μA
VDDE - 0.2
VDDE
V
L level output
voltage
VOL
IOL = 100
μA
0
0.2
V
Driving capability 1 IOH = 4mA
Driving capability 2 IOH = 6mA
H level output V-I
characteristic
Driving capability 3 IOH = 8mA
Driving capability 1 IOL = 4mA
Driving capability 2 IOL = 6mA
L level output V-I
characteristic
Driving capability 3 IOL = 8mA
characteristics
Input leakage
current
IL
±4
μA
Driving capabilities 1 to 3 in the table above indicate the following external pins:
Driving capability 1:
TDO, MEM_EA[24:1], MEM_ED[15:0], MEM_RDY, MEM_XCS0,
MEM_XCS2, MEM_XCS4, MEM_XRD, MEM_XWR0, MEM_XWR1
Driving capability 2:
VINHSYNC0, VINVSYNC0, I2S_ECLK2, I2S_SCK2,
I2S_SDO2,I2S_WS2, IDE_DD[15:0], IDE_DINTRQ, IDE_XCBLID,
IDE_XDASP, PWM_O0, PWM_O1, VIN10-7, VINFID1, DOUTB1[7:2],
DOUTG1[7:2], DOUTR1[7:2], GV1, HSYNC0, HSYNC1, SD_CMD,
SD_DAT[3:0], TRACECLK, TRACEDATA[3:0], VIN0[7:0], VSYNC0,
VSYNC1, XSRST, DE0, DE1, DOUTB0[7:2], DOUTG0[7:2],
DOUTR0[7:2], GV0, IDE_CSEL, IDE_DA[2:0], IDE_XDCS[1:0],
IDE_XDDMACK, IDE_XDIOR, IDE_XDIOW, IDE_XDRESET, RTCK,
SD_CLK, TRACECTL, UART_SOUT[2:0], UART_XRTS0, USB_PRTPWR
Driving capability 3:
DCLKO[1:0]
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