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参数资料
| 型号： | MBM29LV800BE70TN |
| 厂商： | SPANSION LLC |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 |
| 封装： | PLASTIC, TSOP1-48 |
| 文件页数： | 21/64页 |
| 文件大小： | 429K |
| 代理商： | MBM29LV800BE70TN |
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Retired Product
DS05-20888-7E_July 31, 2007
MBM29LV800TE/BE60/70/90
28
Byte/Word Configuration
BYTE pin selects byte (8-bit) mode or word (16-bit) mode for MBM29LV800TE/BE devices. When this pin is
driven high, devices operate in word (16-bit) mode. Data is read and programmed at DQ15 to DQ0. When this
pin is driven low, devices operates in byte (8-bit) mode. Under this mode, the DQ15/A-1 pin becomes the lowest
address bit, and DQ14 to DQ8 bits are tri-stated. However, the command bus cycle is always an 8-bit operation
and hence commands are written at DQ7 to DQ0 and DQ15 to DQ8 bits are ignored. Refer to “Timing Diagram
for Word Mode Configuration”, “Timing Diagram for Byte Mode Configuration” and “BYTE Timing Diagram for
Write Operations” in “
■ TIMING DIAGRAM” for the timing diagram.
Data Protection
MBM29LV800TE/BE are designed to offer protection against accidental erasure or programming caused by
spurious system level signals that may exist during power transitions. During power up, devices automatically
reset internal state machine in Read mode. Also, with its control register architecture, alteration of memory
contents only occurs after successful completion of specific multi-bus cycle command sequences.
Devices also incorporate several features to prevent inadvertent write cycles resulting form VCC power-up and
power-down transitions or system noise.
Low VCC Write Inhibit
To avoid initiation of a write cycle during VCC power-up and power-down, a write cycle is locked out for VCC less
than VLKO (Min) . If VCC < VLKO, the command register is disabled and all internal program/erase circuits are
disabled. Under this condition, the device will reset to the read mode. Subsequent writes will be ignored until
the VCC level is greater than VLKO. It is the users responsibility to ensure that the control pins are logically correct
to prevent unintentional writes when VCC is above VLKO (Min) .
If Embedded Erase Algorithm is interrupted, there is possibility that the erasing sector (s) cannot be used.
Write Pulse “Glitch” Protection
Noise pulses of less than 3 ns (typical) on OE, CE, or WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of OE
= VIL, CE = VIH, or WE = VIH. To initiate a write cycle, CE and WE
must be a logical zero while OE is a logical one.
Power-Up Write Inhibit
Power-up of the devices with WE
= CE = VIL and OE = VIH will not accept commands on the rising edge of WE.
The internal state machine is automatically reset to the read mode on power-up.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MBM29LV800BE90PBT | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT |
| MBM29LV800BE90PCV | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT |
| MBM29LV800BE90TN | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT |
| MBM29LV800TA | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
| MBM29LV800TA-12 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT |
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