参数资料
型号: MBM29LV800BE70TN
厂商: SPANSION LLC
元件分类: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封装: PLASTIC, TSOP1-48
文件页数: 34/64页
文件大小: 429K
代理商: MBM29LV800BE70TN
DS05-20888-7E
FUJITSU SEMICONDUCTOR
DATA SHEET
Retired Product
DS05-20888-7E_July 31, 2007
FLASH MEMORY
CMOS
8 M (1 M
× 8/512 K × 16) BIT
MBM29LV800TE60/70/90/MBM29LV800BE60/70/90
■ DESCRIPTION
The MBM29LV800TE/BE are a 8 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each or
512 Kwords of 16 bits each. The MBM29LV800TE/BE are offered in a 48-pin TSOP (1) , 48-pin CSOP and 48-
ball FBGA package. These devices are designed to be programmed in a system with the standard system 3.0 V
VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be
reprogrammed in standard EPROM programmers.
(Continued)
■ PRODUCT LINE UP
■ PACKAGES
Part No.
MBM29LV800TE/BE
Ordering Part No.
VCC
= 3.3 V
60
VCC
= 3.0 V
70
90
Max Address Access Time (ns)
60
70
90
Max CE Access Time (ns)
60
70
90
Max OE Access Time (ns)
30
35
48-pin Plastic TSOP (1)
48-pin Plastic CSOP
48-ball Plastic FBGA
(FPT-48P-M19)
(LCC-48P-M03)
(BGA-48P-M20)
+0.3 V
0.3 V
+0.6 V
0.3 V
相关PDF资料
PDF描述
MBPL1319B-1R2-KS 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR
MBPL1319B-R30-KS 1 ELEMENT, 0.3 uH, GENERAL PURPOSE INDUCTOR
MBPL1319B-R90-KS 1 ELEMENT, 0.9 uH, GENERAL PURPOSE INDUCTOR
MBR0540PBF 0.5 A, 40 V, SILICON, SIGNAL DIODE
MBR10100CE 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA
相关代理商/技术参数
参数描述
MBM29LV800BE90PBT 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800BE90PCV 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800BE90TN 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
MBM29LV800TA 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT
MBM29LV800TA-12 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:8M (1M X 8/512K X 16) BIT