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参数资料
| 型号： | MBR10100-G |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, SILICON, RECTIFIER DIODE, TO-220AC |
| 封装： | LEAD FREE, PLASTIC PACKAGE-2 |
| 文件页数： | 3/4页 |
| 文件大小： | 508K |
| 代理商： | MBR10100-G |
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SENSITRON
SEMICONDUCTOR
°
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Forward Voltage Drop - V
F (V)
10
-3
10-2
10
-1
10
0
101
In
st
ant
a
neous
F
o
rward
Current
-
I F
(A)
Typical Forward Characteristics
125 °C
200 °C
175 °C
25 °C
0
20
40
60
80
100
120
Reverse Voltage - V
R (V)
10-5
10
-4
10-3
10
-2
10-1
10
0
10
1
In
st
ant
a
neous
Reverse
Current
-
I
R
(mA)
Typical Reverse Characteristics
25 °C
50 °C
75 °C
100 °C
125 °C
150 °C
200°C
175 °C
0
20406080
100
120
Reverse Voltage - V
R (V)
0
50
100
150
200
250
Junct
ion
Capacit
ance
-
C
T
(pF)
Typical Junction Capacitance
3426
221 West Industry Court
Deer Park, NY 11729-4681
(631) 586-7600 FAX (631) 242-9798
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1080-GB1080-G
10100-G10100-G
Green Products
相关PDF资料 |
PDF描述 |
|---|---|
| MBRB1080-G | 10 A, SILICON, RECTIFIER DIODE |
| MBR10100CT-HE3/45 | 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CTL | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10100CT | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR10150CT | 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MBR10100-M3/4W | 制造商:Vishay Semiconductors 功能描述:10A,100V,TRENCH SKY RECT. |
| MBR10100MFST1G | 制造商:ON Semiconductor 功能描述:10 A 100 V SCHOTTKY DIOD - Tape and Reel |
| MBR1010CT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:10A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER |
| MBR1010FCT | 制造商:KERSEMI 制造商全称:Kersemi Electronic Co., Ltd. 功能描述:Surge overload -240~500 amperes peak |
| MBR10125CT | 制造商:World Products 功能描述: |
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