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参数资料
| 型号： | MBT3906DW1T3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-88, 6 PIN |
| 文件页数： | 10/16页 |
| 文件大小： | 327K |
| 代理商： | MBT3906DW1T3 |
MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hie
1.0
2.0
10
12
k
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hre
0.5
0.1
8.0
10
X 10–4
Small – Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hfe
100
400
—
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
MBT3906DW1T1 (PNP)
hoe
1.0
3.0
40
60
mmhos
Noise Figure
(VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MBT3904DW1T1 (NPN)
(VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k , f = 1.0 kHz)
MBT3906DW1T1 (PNP)
NF
—
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = – 0.5 Vdc)
MBT3904DW1T1 (NPN)
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
MBT3906DW1T1 (PNP)
td
—
35
ns
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
tr
—
35
ns
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
MBT3904DW1T1 (NPN)
(VCC = –3.0 Vdc, IC = –10 mAdc)
MBT3906DW1T1 (PNP)
ts
—
200
225
ns
Fall Time
(IB1 = IB2 = 1.0 mAdc)
MBT3904DW1T1 (NPN)
(IB1 = IB2 = –1.0 mAdc)
MBT3906DW1T1 (PNP)
tf
—
50
75
ns
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相关代理商/技术参数 |
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| MBT3946DW | 制造商:WEITRON 制造商全称:Weitron Technology 功能描述:Dual General Purpose Transistor NPN+PNP Silicon |
| MBT3946DW1T1 | 功能描述:两极晶体管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 功能描述:两极晶体管 - BJT 200mA 40V Dual Complementary RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MBT3946DW1T1G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| MBT3946DW1T2 | 功能描述:两极晶体管 - BJT 200mA 40V Dual RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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